Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

Seung Hyun Kim; D. J. Kim; J. Im; S. K. Streiffer; O. Auciello; J. P. Maria; A. I. Kingon

doi:10.1080/10584589908215626

Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

Seung Hyun Kim, D. J. Kim, J. Im, S. K. Streiffer, O. Auciello, J. P. Maria, A. I. Kingon

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The crystallinity and the microstructure of Sr_0.8Bi_2.3Ta₂O₉ (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO₂/SiO₂/Si and Pt/ZrO₂/SiO₂/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO₂Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.

Original language	English (US)
Pages (from-to)	253-268
Number of pages	16
Journal	Integrated Ferroelectrics
Volume	26
Issue number	1
DOIs	https://doi.org/10.1080/10584589908215626
State	Published - 1999
Event	The 11th International Symposium on Integrated Ferroelectrics (ISIF99) - Colorado Springs, CO, USA Duration: Mar 7 1999 → Mar 10 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589908215626

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title = "Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films",

abstract = "The crystallinity and the microstructure of Sr0.8Bi2.3Ta2O9 (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO2Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.",

author = "Kim, {Seung Hyun} and Kim, {D. J.} and J. Im and Streiffer, {S. K.} and O. Auciello and Maria, {J. P.} and Kingon, {A. I.}",

year = "1999",

doi = "10.1080/10584589908215626",

language = "English (US)",

volume = "26",

pages = "253--268",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "The 11th International Symposium on Integrated Ferroelectrics (ISIF99) ; Conference date: 07-03-1999 Through 10-03-1999",

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TY - JOUR

T1 - Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

AU - Kim, Seung Hyun

AU - Kim, D. J.

AU - Im, J.

AU - Streiffer, S. K.

AU - Auciello, O.

AU - Maria, J. P.

AU - Kingon, A. I.

PY - 1999

Y1 - 1999

N2 - The crystallinity and the microstructure of Sr0.8Bi2.3Ta2O9 (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO2Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.

AB - The crystallinity and the microstructure of Sr0.8Bi2.3Ta2O9 (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO2Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.

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DO - 10.1080/10584589908215626

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SN - 1058-4587

VL - 26

SP - 253

EP - 268

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

T2 - The 11th International Symposium on Integrated Ferroelectrics (ISIF99)

Y2 - 7 March 1999 through 10 March 1999

ER -

Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

Abstract

All Science Journal Classification (ASJC) codes

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