Abstract
The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger's and Poisson's equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7 × 1019 cm-3. In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.
Original language | English (US) |
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Pages (from-to) | 387-389 |
Number of pages | 3 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 75 |
Issue number | 3 |
DOIs | |
State | Published - Sep 2002 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science