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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

  • R. M. Chu
  • , Y. D. Zheng
  • , Y. G. Zhou
  • , P. Han
  • , B. Shen
  • , S. L. Gu

Research output: Contribution to journal › Article › peer-review

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