Abstract
We report on the effects of RCA leaching of glass substrates on the performance and hot-carrier reliability of n-channel and p-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The characteristics of the TFTs on RCA-treated glass are contrasted to those of TFTs on untreated glass. It is found out that RCA treatment of the glass significantly enhances transistor's properties. This is attributed to the formation by the RCA treatment of a silica-rich layer on the glass surface. The layer acts as a barrier for impurity diffusion from the glass to the active poly-Si layer in the TFT: this impurity diffusion is the mechanism responsible for the degradation of the TFT on bare glass.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 299-310 |
| Number of pages | 12 |
| Journal | Microelectronic Engineering |
| Volume | 45 |
| Issue number | 4 |
| DOIs | |
| State | Published - Aug 1999 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering