Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

P. Sharma; K. Tapily; A. K. Saha; J. Zhang; A. Shaughnessy; A. Aziz; G. L. Snider; S. Gupta; R. D. Clark; S. Datta

doi:10.23919/VLSIT.2017.7998160

Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

P. Sharma, K. Tapily, A. K. Saha, J. Zhang, A. Shaughnessy, A. Aziz, G. L. Snider, S. Gupta, R. D. Clark, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

90 Scopus citations

Abstract

We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf_0.5Zr_0.5O₂ (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SS_rev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 % higher than that of HfO₂ based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO₂ layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.

Original language	English (US)
Title of host publication	2017 Symposium on VLSI Technology, VLSI Technology 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	T154-T155
ISBN (Electronic)	9784863486058
DOIs	https://doi.org/10.23919/VLSIT.2017.7998160
State	Published - Jul 31 2017
Event	37th Symposium on VLSI Technology, VLSI Technology 2017 - Kyoto, Japan Duration: Jun 5 2017 → Jun 8 2017

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	37th Symposium on VLSI Technology, VLSI Technology 2017
Country/Territory	Japan
City	Kyoto
Period	6/5/17 → 6/8/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.23919/VLSIT.2017.7998160

Cite this

Sharma, P., Tapily, K., Saha, A. K., Zhang, J., Shaughnessy, A., Aziz, A., Snider, G. L., Gupta, S., Clark, R. D., & Datta, S. (2017). Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. In 2017 Symposium on VLSI Technology, VLSI Technology 2017 (pp. T154-T155). Article 7998160 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2017.7998160

Sharma, P. ; Tapily, K. ; Saha, A. K. et al. / Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. T154-T155 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{6d521472f6aa4b95bbed2b3584a34c82,

title = "Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack",

abstract = "We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 % higher than that of HfO2 based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO2 layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.",

author = "P. Sharma and K. Tapily and Saha, {A. K.} and J. Zhang and A. Shaughnessy and A. Aziz and Snider, {G. L.} and S. Gupta and Clark, {R. D.} and S. Datta",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 37th Symposium on VLSI Technology, VLSI Technology 2017 ; Conference date: 05-06-2017 Through 08-06-2017",

year = "2017",

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doi = "10.23919/VLSIT.2017.7998160",

language = "English (US)",

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Sharma, P, Tapily, K, Saha, AK, Zhang, J, Shaughnessy, A, Aziz, A, Snider, GL, Gupta, S, Clark, RD & Datta, S 2017, Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. in 2017 Symposium on VLSI Technology, VLSI Technology 2017., 7998160, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., pp. T154-T155, 37th Symposium on VLSI Technology, VLSI Technology 2017, Kyoto, Japan, 6/5/17. https://doi.org/10.23919/VLSIT.2017.7998160

Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. / Sharma, P.; Tapily, K.; Saha, A. K. et al.
2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. T154-T155 7998160 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

AU - Sharma, P.

AU - Tapily, K.

AU - Saha, A. K.

AU - Zhang, J.

AU - Shaughnessy, A.

AU - Aziz, A.

AU - Snider, G. L.

AU - Gupta, S.

AU - Clark, R. D.

AU - Datta, S.

PY - 2017/7/31

Y1 - 2017/7/31

N2 - We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 % higher than that of HfO2 based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO2 layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.

AB - We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 % higher than that of HfO2 based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO2 layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.

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DO - 10.23919/VLSIT.2017.7998160

M3 - Conference contribution

AN - SCOPUS:85028059471

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - T154-T155

BT - 2017 Symposium on VLSI Technology, VLSI Technology 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 37th Symposium on VLSI Technology, VLSI Technology 2017

Y2 - 5 June 2017 through 8 June 2017

ER -

Sharma P, Tapily K, Saha AK, Zhang J, Shaughnessy A, Aziz A et al. Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. In 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. T154-T155. 7998160. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSIT.2017.7998160

Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

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