Keyphrases
High Electron Mobility Transistor
100%
Self-heating
100%
Gallium Nitride
100%
Temperature Rise
28%
GaN HEMT
28%
Thermal Resistance
28%
Channel Temperature
28%
Thermal Boundary Conductance
28%
SiC Wafer
28%
Wafer
14%
Full Potential
14%
Epitaxial
14%
Thermal Conductivity
14%
Buffer Layer
14%
Measurement Structure
14%
Substrate Interface
14%
Substrate Material
14%
Wireless Communication Systems
14%
Resistive Component
14%
Device Configuration
14%
Thermal Boundary Resistance
14%
Device Temperature
14%
Transmission Line Measurements
14%
Frequency-domain Thermoreflectance
14%
Material Science
Transistor
100%
Gallium Nitride
100%
Electron Mobility
100%
Heat Resistance
22%
Thermal Conductivity
11%
Buffer Layer
11%
Engineering
Nitride
100%
Temperature Rise
22%
Heat Resistance
22%
Frequency Domain
11%
Electric Lines
11%
Wireless Communication
11%
Communication System
11%
Thermal Conductivity
11%
Buffer Layer
11%
Substrate Interface
11%
Substrate Material
11%
Resistive Component
11%