TY - JOUR
T1 - Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation
AU - Asif, Muhammad
AU - Chen, Chen
AU - Peng, Ding
AU - Xi, Wang
AU - Zhi, Jin
N1 - Funding Information:
Project supported by CAS-TWAS President's Fellowship for International PhD Students program and the National Natural Science Foundation of China (Grant No. 61434006 ).
Publisher Copyright:
© 2018
PY - 2018/4
Y1 - 2018/4
N2 - Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.
AB - Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.
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U2 - 10.1016/j.sse.2018.02.001
DO - 10.1016/j.sse.2018.02.001
M3 - Article
AN - SCOPUS:85041916975
SN - 0038-1101
VL - 142
SP - 36
EP - 40
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -