Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

E. D. Luckowski; J. M. Delucca; J. R. Williams; S. E. Mohney; M. J. Bozack; T. Isaacs-Smith; J. Crofton

doi:10.1007/s11664-998-0410-y

Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

E. D. Luckowski, J. M. Delucca, J. R. Williams, S. E. Mohney, M. J. Bozack, T. Isaacs-Smith, J. Crofton

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10^-5Ω-cm² for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.

Original language	English (US)
Pages (from-to)	330-334
Number of pages	5
Journal	Journal of Electronic Materials
Volume	27
Issue number	4
DOIs	https://doi.org/10.1007/s11664-998-0410-y
State	Published - Apr 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-998-0410-y

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@article{79079c564bc94d3cb10b12982bde0d21,

title = "Improved ohmic contact to n-type 4H and 6H-SiC using nichrome",

abstract = "Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.",

author = "Luckowski, {E. D.} and Delucca, {J. M.} and Williams, {J. R.} and Mohney, {S. E.} and Bozack, {M. J.} and T. Isaacs-Smith and J. Crofton",

note = "Funding Information: This work was supported by the Center for Commercial Development of Space and Advanced Electronics, located at Auburn University, under NASA Grant NAGW-1192-CCDS-AD.",

year = "1998",

month = apr,

doi = "10.1007/s11664-998-0410-y",

language = "English (US)",

volume = "27",

pages = "330--334",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

AU - Luckowski, E. D.

AU - Delucca, J. M.

AU - Williams, J. R.

AU - Mohney, S. E.

AU - Bozack, M. J.

AU - Isaacs-Smith, T.

AU - Crofton, J.

N1 - Funding Information: This work was supported by the Center for Commercial Development of Space and Advanced Electronics, located at Auburn University, under NASA Grant NAGW-1192-CCDS-AD.

PY - 1998/4

Y1 - 1998/4

N2 - Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.

AB - Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.

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U2 - 10.1007/s11664-998-0410-y

DO - 10.1007/s11664-998-0410-y

M3 - Article

AN - SCOPUS:0011577657

SN - 0361-5235

VL - 27

SP - 330

EP - 334

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

Abstract

All Science Journal Classification (ASJC) codes

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