Improved power conversion efficiency of InP solar cells using organic window layers

Ning Li; Kyusang Lee; Christopher K. Renshaw; Xin Xiao; Stephen R. Forrest

doi:10.1063/1.3549692

Improved power conversion efficiency of InP solar cells using organic window layers

Ning Li, Kyusang Lee, Christopher K. Renshaw, Xin Xiao, Stephen R. Forrest

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We employ the organic semiconductor 3,4,9,10-perylene-tetracarboxylic- dianhydride (PTCDA) as a nanometer thick window layer for p-InP/indium tin oxide (ITO) Schottky barrier diode solar cells. The power conversion efficiency is enhanced compared to ITO/InP cells lacking the PTCDA window layer, primarily due to neutralizing InP surface state charges via hole injection from the PTCDA. This leads to an increased ITO/p-InP Schottky barrier height, and hence to an increased open circuit voltage. The power conversion efficiency of the cells increases from 13.2±0.5% for the ITO/InP cell to 15.4±0.4% for the ITO/4 nm PTCDA/p-InP cell under 1 sun, AM1.5G simulated solar illumination. The PTCDA window layer is also shown to contribute to the photocurrent by light absorption followed by exciton dissociation at the organic/inorganic semiconductor interface.

Original language	English (US)
Article number	053504
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3549692
State	Published - Jan 31 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Improved power conversion efficiency of InP solar cells using organic window layers",

abstract = "We employ the organic semiconductor 3,4,9,10-perylene-tetracarboxylic- dianhydride (PTCDA) as a nanometer thick window layer for p-InP/indium tin oxide (ITO) Schottky barrier diode solar cells. The power conversion efficiency is enhanced compared to ITO/InP cells lacking the PTCDA window layer, primarily due to neutralizing InP surface state charges via hole injection from the PTCDA. This leads to an increased ITO/p-InP Schottky barrier height, and hence to an increased open circuit voltage. The power conversion efficiency of the cells increases from 13.2±0.5% for the ITO/InP cell to 15.4±0.4% for the ITO/4 nm PTCDA/p-InP cell under 1 sun, AM1.5G simulated solar illumination. The PTCDA window layer is also shown to contribute to the photocurrent by light absorption followed by exciton dissociation at the organic/inorganic semiconductor interface.",

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AU - Li, Ning

AU - Lee, Kyusang

AU - Renshaw, Christopher K.

AU - Xiao, Xin

AU - Forrest, Stephen R.

PY - 2011/1/31

Y1 - 2011/1/31

N2 - We employ the organic semiconductor 3,4,9,10-perylene-tetracarboxylic- dianhydride (PTCDA) as a nanometer thick window layer for p-InP/indium tin oxide (ITO) Schottky barrier diode solar cells. The power conversion efficiency is enhanced compared to ITO/InP cells lacking the PTCDA window layer, primarily due to neutralizing InP surface state charges via hole injection from the PTCDA. This leads to an increased ITO/p-InP Schottky barrier height, and hence to an increased open circuit voltage. The power conversion efficiency of the cells increases from 13.2±0.5% for the ITO/InP cell to 15.4±0.4% for the ITO/4 nm PTCDA/p-InP cell under 1 sun, AM1.5G simulated solar illumination. The PTCDA window layer is also shown to contribute to the photocurrent by light absorption followed by exciton dissociation at the organic/inorganic semiconductor interface.

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Improved power conversion efficiency of InP solar cells using organic window layers

Abstract

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