Abstract
We report a novel strategy to enhance the rate capability of Si-C composite by facile boron doping. Boron doping was confirmed by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The boron-doped Si-C composite shows much improved rate capability, delivering a capacity of 575 mAh/g at 6.4 A/g without any external carbon additive, 80% higher than that of undoped composite. Electrochemical impedance spectroscopy (EIS) measurement shows that boron-doped Si-C composite has lower charge transfer resistance, which helps improve its rate capability.
Original language | English (US) |
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Pages (from-to) | 29-32 |
Number of pages | 4 |
Journal | Electrochemistry Communications |
Volume | 36 |
DOIs | |
State | Published - 2013 |
All Science Journal Classification (ASJC) codes
- Electrochemistry