TY - JOUR
T1 - Improved rhenium Schottky diodes to n-type gallium nitride
AU - Molina, Alex
AU - Mohney, Suzanne E.
N1 - Funding Information:
Funding: This work was funded by the Office of Naval Research under Grant N000141812360 . Approved, DCN# 43-9503-22, DISTRIBUTION STATEMENT A. Approved for public release, distribution unlimited.
Funding Information:
The authors are grateful to Andrew Allerman from Sandia National Laboratories for the GaN epilayers. AM thanks the Alfred P. Sloan Foundation for partial support through the Sloan Minority Ph.D. Program.
Publisher Copyright:
© 2022
PY - 2022/9
Y1 - 2022/9
N2 - Rhenium deposited by electron-beam evaporation and sputtering was studied for Schottky contacts to n-type gallium nitride (GaN). Barrier heights were investigated via current-voltage, current-voltage-temperature, and capacitance-voltage measurements. Electron-beam evaporated Au/Re/n-GaN diodes exhibited an average Schottky barrier height (SBH) of 0.78 ± 0.04 eV and ideality factor (n) of 1.02 ± 0.01 as deposited, and 0.81 ± 0.03 eV and 1.02 ± 0.01, respectively, when annealed for 5 min at 400°C. On the other hand, sputtered Re contacts offered poor electrical characteristics as deposited with the SBH = 0.38–0.41 eV and n = 1.26–1.73. They improved when annealed for 5 min at 500°C with a SBH = 0.74 ± <0.01 eV and n = 1.02 ± <0.01, yet the sputtered diodes were not as thermally stable. This study highlights the importance of choices made during fabrication of nominally the same structures that can dramatically affect their performance. Damage introduced during sputter deposition can be healed by annealing, but not completely since thermal stability is compromised.
AB - Rhenium deposited by electron-beam evaporation and sputtering was studied for Schottky contacts to n-type gallium nitride (GaN). Barrier heights were investigated via current-voltage, current-voltage-temperature, and capacitance-voltage measurements. Electron-beam evaporated Au/Re/n-GaN diodes exhibited an average Schottky barrier height (SBH) of 0.78 ± 0.04 eV and ideality factor (n) of 1.02 ± 0.01 as deposited, and 0.81 ± 0.03 eV and 1.02 ± 0.01, respectively, when annealed for 5 min at 400°C. On the other hand, sputtered Re contacts offered poor electrical characteristics as deposited with the SBH = 0.38–0.41 eV and n = 1.26–1.73. They improved when annealed for 5 min at 500°C with a SBH = 0.74 ± <0.01 eV and n = 1.02 ± <0.01, yet the sputtered diodes were not as thermally stable. This study highlights the importance of choices made during fabrication of nominally the same structures that can dramatically affect their performance. Damage introduced during sputter deposition can be healed by annealing, but not completely since thermal stability is compromised.
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U2 - 10.1016/j.mssp.2022.106799
DO - 10.1016/j.mssp.2022.106799
M3 - Article
AN - SCOPUS:85130547244
SN - 1369-8001
VL - 148
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 106799
ER -