TY - JOUR
T1 - Improved thermal stability of [0 0 1]c poled 0.24Pb(In 1/2Nb1/2)O3-0.47Pb(Mg1/3Nb 2/3)O3-0.29PbTiO3 single crystal with manganese doping
AU - Wang, Yuling
AU - Sun, Enwei
AU - Song, Wei
AU - Li, Wanchong
AU - Zhang, Rui
AU - Cao, Wenwu
N1 - Funding Information:
This research was supported in part by the National Key Basic Research Program of China (973) under Grant No. 2013CB632900 , the National Natural Science Foundation of China of under Grant Nos. 50602009 and 11304061 , Program of the Ministry of Education of China for New Century Excellent Talents in University under Grant No. NCET-06-0345 , Postdoctoral Science Research Developmental Foundation of Heilongjiang Province under Grant No. LBH-Q06068 , the Fundamental Research Funds for the Central Universities under Grant No. HIT.NSRIF.2014083 , the China Postdoctoral Science Foundation under Grant No. 2013M531029 , and the Daqing Normal University Youth Foundation No. 12ZR12 .
PY - 2014/7/15
Y1 - 2014/7/15
N2 - The temperature dependence of dielectric, piezoelectric, and electromechanical coupling properties of 0.5 wt.% manganese-doped and undoped [0 0 1]c-poled 0.24Pb(In1/2Nb1/2)O 3-0.47Pb(Mg1/3Nb2/3)O3-0. 29PbTiO3 (0.24PIN-0.47PMN-0.29PT) single crystals has been investigated. Compared to the undoped single crystal, the Mn-doped 0.24PIN-0.47PMN-0.29PT demonstrated higher level of coercive field (9.8 kV/cm), increased Curie temperature (187 C), improved mechanical quality factor Q m (196), decreased piezoelectric constant d33 and comparable electromechanical coupling factor k33, indicating hardening effects caused by the manganese ion substitution. More importantly, it was found that the Mn substitution significantly enhanced temperature stabilities of k33, d33 and Qm, leading to 30-40 C improvement of the usage temperature range. These results show the application potential of Mn-doped ternary PIN-PMN-PT single crystals for the high-temperature and high-power electromechanical devices.
AB - The temperature dependence of dielectric, piezoelectric, and electromechanical coupling properties of 0.5 wt.% manganese-doped and undoped [0 0 1]c-poled 0.24Pb(In1/2Nb1/2)O 3-0.47Pb(Mg1/3Nb2/3)O3-0. 29PbTiO3 (0.24PIN-0.47PMN-0.29PT) single crystals has been investigated. Compared to the undoped single crystal, the Mn-doped 0.24PIN-0.47PMN-0.29PT demonstrated higher level of coercive field (9.8 kV/cm), increased Curie temperature (187 C), improved mechanical quality factor Q m (196), decreased piezoelectric constant d33 and comparable electromechanical coupling factor k33, indicating hardening effects caused by the manganese ion substitution. More importantly, it was found that the Mn substitution significantly enhanced temperature stabilities of k33, d33 and Qm, leading to 30-40 C improvement of the usage temperature range. These results show the application potential of Mn-doped ternary PIN-PMN-PT single crystals for the high-temperature and high-power electromechanical devices.
UR - https://www.scopus.com/pages/publications/84896453128
UR - https://www.scopus.com/pages/publications/84896453128#tab=citedBy
U2 - 10.1016/j.jallcom.2014.02.174
DO - 10.1016/j.jallcom.2014.02.174
M3 - Article
AN - SCOPUS:84896453128
SN - 0925-8388
VL - 601
SP - 154
EP - 157
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -