Improved thermoelectric properties due to electronic topological transition under high pressure

N. V. Chandra Shekar; D. A. Polvani; J. F. Meng; J. V. Badding

doi:10.1016/j.physb.2004.12.020

Improved thermoelectric properties due to electronic topological transition under high pressure

N. V. Chandra Shekar, D. A. Polvani, J. F. Meng, J. V. Badding

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to ETT. Further, the validity and relevance of certain important criteria for obtaining higher thermoelectric power near ETT is discussed. The possibility of using ETT in designing new materials with the thermoelectric figure of merit higher than 1 is examined.

Original language	English (US)
Pages (from-to)	14-18
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	358
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physb.2004.12.020
State	Published - Apr 15 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2004.12.020

Cite this

@article{6303e516b1464ea49e2e545fdcaa7c15,

title = "Improved thermoelectric properties due to electronic topological transition under high pressure",

abstract = "It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to ETT. Further, the validity and relevance of certain important criteria for obtaining higher thermoelectric power near ETT is discussed. The possibility of using ETT in designing new materials with the thermoelectric figure of merit higher than 1 is examined.",

author = "{Chandra Shekar}, {N. V.} and Polvani, {D. A.} and Meng, {J. F.} and Badding, {J. V.}",

year = "2005",

month = apr,

day = "15",

doi = "10.1016/j.physb.2004.12.020",

language = "English (US)",

volume = "358",

pages = "14--18",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Improved thermoelectric properties due to electronic topological transition under high pressure

AU - Chandra Shekar, N. V.

AU - Polvani, D. A.

AU - Meng, J. F.

AU - Badding, J. V.

PY - 2005/4/15

Y1 - 2005/4/15

N2 - It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to ETT. Further, the validity and relevance of certain important criteria for obtaining higher thermoelectric power near ETT is discussed. The possibility of using ETT in designing new materials with the thermoelectric figure of merit higher than 1 is examined.

AB - It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to ETT. Further, the validity and relevance of certain important criteria for obtaining higher thermoelectric power near ETT is discussed. The possibility of using ETT in designing new materials with the thermoelectric figure of merit higher than 1 is examined.

UR - http://www.scopus.com/inward/record.url?scp=15344341461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15344341461&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2004.12.020

DO - 10.1016/j.physb.2004.12.020

M3 - Article

AN - SCOPUS:15344341461

SN - 0921-4526

VL - 358

SP - 14

EP - 18

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Improved thermoelectric properties due to electronic topological transition under high pressure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this