Abstract
The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/μm to 12.5 V/μm and the electron field emission current density increased from 10E-5 mA/cm2 to 1 × 10E-2 mA/cm2. The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp3-bonded carbons into sp 2-bonded ones) in UNCD films.
Original language | English (US) |
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Pages (from-to) | 238-241 |
Number of pages | 4 |
Journal | Diamond and Related Materials |
Volume | 20 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering