Improving leakage currents of Pt/Ba0.8Sr0.2TiO3/Pt capacitors using multilayered structures

Yanyan Zhu; Mingrong Shen; Run Xu; Wenwu Cao

doi:10.1016/S0257-8972(02)00402-4

Improving leakage currents of Pt/Ba_0.8Sr_0.2TiO₃/Pt capacitors using multilayered structures

Yanyan Zhu
, Mingrong Shen
, Run Xu
, Wenwu Cao

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Pt/Ba_0.8Sr_0.2TiO₃ (BST)/Pt capacitors fabricated by the sol-gel process generally show abnormally high leakage currents. In this paper, we report the reduction of this leakage current in multilayered sol-gel Pt/BST/Pt thin film capacitors. The multilayered structure also provided the flexibility of adjusting the dielectric constant of the film. The thin films were fabricated by a step-by-step annealing scheme at 750 °C except that the top and bottom layers were annealed at less than 750 °C. The observed results are explained by an amorphous/polycrystalline structure, which was confirmed by scanning electron microscopy and X-ray diffraction analysis.

Original language	English (US)
Pages (from-to)	277-281
Number of pages	5
Journal	Surface and Coatings Technology
Volume	160
Issue number	2-3
DOIs	https://doi.org/10.1016/S0257-8972(02)00402-4
State	Published - Oct 22 2002

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0257-8972(02)00402-4

Cite this

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title = "Improving leakage currents of Pt/Ba0.8Sr0.2TiO3/Pt capacitors using multilayered structures",

abstract = "Pt/Ba0.8Sr0.2TiO3 (BST)/Pt capacitors fabricated by the sol-gel process generally show abnormally high leakage currents. In this paper, we report the reduction of this leakage current in multilayered sol-gel Pt/BST/Pt thin film capacitors. The multilayered structure also provided the flexibility of adjusting the dielectric constant of the film. The thin films were fabricated by a step-by-step annealing scheme at 750 °C except that the top and bottom layers were annealed at less than 750 °C. The observed results are explained by an amorphous/polycrystalline structure, which was confirmed by scanning electron microscopy and X-ray diffraction analysis.",

author = "Yanyan Zhu and Mingrong Shen and Run Xu and Wenwu Cao",

note = "Funding Information: The authors wish to express their appreciation for the financial support from the Natural Science Foundation for youth of Jiangsu, China (Grant No. BQ 98037).",

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doi = "10.1016/S0257-8972(02)00402-4",

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TY - JOUR

T1 - Improving leakage currents of Pt/Ba0.8Sr0.2TiO3/Pt capacitors using multilayered structures

AU - Zhu, Yanyan

AU - Shen, Mingrong

AU - Xu, Run

AU - Cao, Wenwu

N1 - Funding Information: The authors wish to express their appreciation for the financial support from the Natural Science Foundation for youth of Jiangsu, China (Grant No. BQ 98037).

PY - 2002/10/22

Y1 - 2002/10/22

N2 - Pt/Ba0.8Sr0.2TiO3 (BST)/Pt capacitors fabricated by the sol-gel process generally show abnormally high leakage currents. In this paper, we report the reduction of this leakage current in multilayered sol-gel Pt/BST/Pt thin film capacitors. The multilayered structure also provided the flexibility of adjusting the dielectric constant of the film. The thin films were fabricated by a step-by-step annealing scheme at 750 °C except that the top and bottom layers were annealed at less than 750 °C. The observed results are explained by an amorphous/polycrystalline structure, which was confirmed by scanning electron microscopy and X-ray diffraction analysis.

AB - Pt/Ba0.8Sr0.2TiO3 (BST)/Pt capacitors fabricated by the sol-gel process generally show abnormally high leakage currents. In this paper, we report the reduction of this leakage current in multilayered sol-gel Pt/BST/Pt thin film capacitors. The multilayered structure also provided the flexibility of adjusting the dielectric constant of the film. The thin films were fabricated by a step-by-step annealing scheme at 750 °C except that the top and bottom layers were annealed at less than 750 °C. The observed results are explained by an amorphous/polycrystalline structure, which was confirmed by scanning electron microscopy and X-ray diffraction analysis.

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U2 - 10.1016/S0257-8972(02)00402-4

DO - 10.1016/S0257-8972(02)00402-4

M3 - Article

AN - SCOPUS:0037159163

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VL - 160

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EP - 281

JO - Surface and Coatings Technology

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IS - 2-3

ER -

Improving leakage currents of Pt/Ba_0.8Sr_0.2TiO₃/Pt capacitors using multilayered structures

Abstract

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