TY - GEN
T1 - Impurity doping effect on electric field induced strains in (Pb,Ba) (Zr,Ti)O3
AU - Hagimura, H.
AU - Nakajima, M.
AU - Miyata, K.
AU - Uchino, K.
PY - 1992/12/1
Y1 - 1992/12/1
N2 - The doping effect of various rare-earth metals on electric field strains was investigated in (Pb,Ba) (Zr,Ti)O3 ceramics. The ceramics doped with La, Ce or Pr, whose ionic radius is larger than that of Nd exhibited soft piezoelectric properties. The ceramics doped with Dy, Gd, Er, or Y of smaller ionic size showed hard piezoelectric characteristics. The induced strain was greatest around the boundary samples between the soft and hard types. The maximum strain under an electric field of 1 kV/mm reached up to 0.13% for the ceramics doped with Nd. The dependence of the electric field induced strain on the doping amount and temperature has also been investigated.
AB - The doping effect of various rare-earth metals on electric field strains was investigated in (Pb,Ba) (Zr,Ti)O3 ceramics. The ceramics doped with La, Ce or Pr, whose ionic radius is larger than that of Nd exhibited soft piezoelectric properties. The ceramics doped with Dy, Gd, Er, or Y of smaller ionic size showed hard piezoelectric characteristics. The induced strain was greatest around the boundary samples between the soft and hard types. The maximum strain under an electric field of 1 kV/mm reached up to 0.13% for the ceramics doped with Nd. The dependence of the electric field induced strain on the doping amount and temperature has also been investigated.
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M3 - Conference contribution
AN - SCOPUS:0026971782
SN - 0780301900
T3 - 90 IEEE 7 Int Symp Appl Ferroelectr
SP - 185
EP - 188
BT - 90 IEEE 7 Int Symp Appl Ferroelectr
PB - Publ by IEEE
T2 - 1990 IEEE 7th International Symposium on Applications of Ferroelectrics
Y2 - 6 June 1990 through 8 June 1990
ER -