In-Memory Computing Primitive for Sensor Data Fusion in 28 nm HKMG FeFET Technology

  • K. Ni
  • , B. Grisafe
  • , W. Chakraborty
  • , A. K. Saha
  • , S. Dutta
  • , M. Jerry
  • , J. A. Smith
  • , S. Gupta
  • , S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

48 Scopus citations

Abstract

In this work, we exploit the spatio-temporal switching dynamics of ferroelectric polarization to realize an energy-efficient, and massively-parallel in-memory computational primitive for at-node sensor data fusion and analytics based on an industrial 28nm HKMG FeFET technology [1]. We demonstrate: (i) the spatio-temporal dynamics of polarization switching in HfO2-based ferroelectrics under the stimuli of sub-coercive voltage pulses using experiments and phase-field modeling; (ii) an inherent rectifying conductance accumulation characteristic in FeFET with a large dynamic range of G/G > 100 in the case of 3.0V, 50ns gate pulses; (iii) transition to more abrupt accumulation characteristics due to single/few domain polarization switching in scaled FeFET (34nm LG); and (iv) successful detection of physiological anomalies from realworld multi-modal sensor data streams.

Original languageEnglish (US)
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.1.1-16.1.4
ISBN (Electronic)9781728119878
DOIs
StatePublished - Jul 2 2018
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: Dec 1 2018Dec 5 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/TerritoryUnited States
CitySan Francisco
Period12/1/1812/5/18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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