In-plane magnetization-induced quantum anomalous hall effect

Xin Liu, Hsiu Chuan Hsu, Chao Xing Liu

Research output: Contribution to journalArticlepeer-review

104 Scopus citations


The quantum Hall effect can only be induced by an out-of-plane magnetic field for two-dimensional electron gases, and similarly, the quantum anomalous Hall effect has also usually been considered for systems with only out-of-plane magnetization. In the present work, we predict that the quantum anomalous Hall effect can be induced by in-plane magnetization that is not accompanied by any out-of-plane magnetic field. Two realistic two-dimensional systems, Bi 2Te3 thin film with magnetic doping and HgMnTe quantum wells with shear strains, are presented and the general condition for the in-plane magnetization-induced quantum anomalous Hall effect is discussed based on the symmetry analysis. Nonetheless, an experimental setup is proposed to confirm this effect, the observation of which will pave the way to search for the quantum anomalous Hall effect in a wider range of materials.

Original languageEnglish (US)
Article number086802
JournalPhysical review letters
Issue number8
StatePublished - Aug 20 2013

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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