TY - JOUR
T1 - In-plane mosaic potential growth of large-area 2D layered semiconductors MoS2−MoSe2 lateral heterostructures and photodetector application
AU - Chen, Xiaoshuang
AU - Qiu, Yunfeng
AU - Yang, Huihui
AU - Liu, Guangbo
AU - Zheng, Wei
AU - Feng, Wei
AU - Cao, Wenwu
AU - Hu, Wenping
AU - Hu, Ping An
N1 - Publisher Copyright:
© 2016 American Chemical Society
PY - 2017/1/18
Y1 - 2017/1/18
N2 - Considering the unique layered structure and novel optoelectronic properties of individual MoS2 and MoSe2, as well as the quantum coherence or donor−acceptor coupling effects between these two components, rational design and artificial growth of in-plane mosaic MoS2/MoSe2 lateral heterojunctions film on conventional amorphous SiO2/Si substrate are in high demand. In this article, large-area, uniform, high-quality mosaic MoS2/MoSe2 lateral heterojunctions film was successfully grown on SiO2/Si substrate for the first time by chemical vapor deposition (CVD) technique. MoSe2 film was grown along MoS2 triangle edges and occupied the blanks of the substrate, finally leading to the formation of mosaic MoS2/MoSe2 lateral heterojunctions film. The composition and microstructure of mosaic MoS2/MoSe2 lateral heterojunctions film were characterized by various analytic techniques. Photodetectors based on mosaic MoS2/MoSe2 lateral heterojunctions film, triangular MoS2 monolayer, and multilayer MoSe2 film are systematically investigated. The mosaic MoS2/MoSe2 lateral heterojunctions film photodetector exhibited optimal photoresponse performance, giving rise to responsivity, detectivity, and external quantum efficiency (EQE) up to 1.3 A W−1, 2.6 × 1011 Jones, and 263.1%, respectively, under the bias voltage of 5 V with 0.29 mW cm−2 (610 nm), possibly due to the matched band alignment of MoS2 and MoSe2 and strong donor−acceptor delocalization effect between them. Taking into account the similar edge conditions of transition metal dichalcogenides (TMDCs), such a facile and reliable approach might open up a unique route for preparing other 2D mosaic lateral heterojunctions films in a manipulative manner. Furthermore, the mosaic lateral heterojunctions film like MoS2/MoSe2 in the present work will be a promising candidate for optoelectronic fields.
AB - Considering the unique layered structure and novel optoelectronic properties of individual MoS2 and MoSe2, as well as the quantum coherence or donor−acceptor coupling effects between these two components, rational design and artificial growth of in-plane mosaic MoS2/MoSe2 lateral heterojunctions film on conventional amorphous SiO2/Si substrate are in high demand. In this article, large-area, uniform, high-quality mosaic MoS2/MoSe2 lateral heterojunctions film was successfully grown on SiO2/Si substrate for the first time by chemical vapor deposition (CVD) technique. MoSe2 film was grown along MoS2 triangle edges and occupied the blanks of the substrate, finally leading to the formation of mosaic MoS2/MoSe2 lateral heterojunctions film. The composition and microstructure of mosaic MoS2/MoSe2 lateral heterojunctions film were characterized by various analytic techniques. Photodetectors based on mosaic MoS2/MoSe2 lateral heterojunctions film, triangular MoS2 monolayer, and multilayer MoSe2 film are systematically investigated. The mosaic MoS2/MoSe2 lateral heterojunctions film photodetector exhibited optimal photoresponse performance, giving rise to responsivity, detectivity, and external quantum efficiency (EQE) up to 1.3 A W−1, 2.6 × 1011 Jones, and 263.1%, respectively, under the bias voltage of 5 V with 0.29 mW cm−2 (610 nm), possibly due to the matched band alignment of MoS2 and MoSe2 and strong donor−acceptor delocalization effect between them. Taking into account the similar edge conditions of transition metal dichalcogenides (TMDCs), such a facile and reliable approach might open up a unique route for preparing other 2D mosaic lateral heterojunctions films in a manipulative manner. Furthermore, the mosaic lateral heterojunctions film like MoS2/MoSe2 in the present work will be a promising candidate for optoelectronic fields.
UR - http://www.scopus.com/inward/record.url?scp=85021753396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021753396&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b13379
DO - 10.1021/acsami.6b13379
M3 - Article
C2 - 28008759
AN - SCOPUS:85021753396
SN - 1944-8244
VL - 9
SP - 1684
EP - 1691
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 2
ER -