TY - JOUR
T1 - In-plane plasmon coupling in topological insulator Bi2Se3thin films
AU - Nasir, Saadia
AU - Wang, Zhengtianye
AU - Mambakkam, Sivakumar V.
AU - Law, Stephanie
N1 - Publisher Copyright:
© 2021 Author(s).
PY - 2021/11/15
Y1 - 2021/11/15
N2 - The surface states of the 3D topological insulator (TI), Bi2Se3, are known to host two-dimensional Dirac plasmon polaritons (DPPs) in the terahertz spectral range. In TI thin films, the DPPs excited on the top and bottom surfaces couple, leading to an acoustic mode and an optical plasmon mode. Vertical coupling in these materials is, therefore, reasonably well-understood, but in-plane coupling among localized TI DPPs has yet to be investigated. In this paper, we demonstrate in-plane DPP coupling in TI stripe arrays and show that they exhibit dipole-dipole type coupling. The coupling becomes negligible when the lattice constant is greater than approximately 2.8 times the stripe width, which is comparable to results for in-plane coupling of localized plasmons excited on metallic nanoparticles or graphene plasmon polaritons. This understanding could be leveraged for the creation of TI-based metasurfaces.
AB - The surface states of the 3D topological insulator (TI), Bi2Se3, are known to host two-dimensional Dirac plasmon polaritons (DPPs) in the terahertz spectral range. In TI thin films, the DPPs excited on the top and bottom surfaces couple, leading to an acoustic mode and an optical plasmon mode. Vertical coupling in these materials is, therefore, reasonably well-understood, but in-plane coupling among localized TI DPPs has yet to be investigated. In this paper, we demonstrate in-plane DPP coupling in TI stripe arrays and show that they exhibit dipole-dipole type coupling. The coupling becomes negligible when the lattice constant is greater than approximately 2.8 times the stripe width, which is comparable to results for in-plane coupling of localized plasmons excited on metallic nanoparticles or graphene plasmon polaritons. This understanding could be leveraged for the creation of TI-based metasurfaces.
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U2 - 10.1063/5.0071895
DO - 10.1063/5.0071895
M3 - Article
AN - SCOPUS:85119893781
SN - 0003-6951
VL - 119
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 20
M1 - 201103
ER -