In-plane polarized 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films

Qifa Zhou; Qingqi Zhang; Baomin Xu; Susan Trolier-McKinstry

doi:10.1111/j.1151-2916.2002.tb00394.x

In-plane polarized 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ thin films

Qifa Zhou
, Qingqi Zhang
, Baomin Xu
, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) thin films were deposited on ZrO₂/SiO₂/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm²) than for through-the-thickness polarized PMN-PT thin films (10-12 μC/cm²) deposited on Pt/Ti/Si substrates. For a ringer spacing of 20 μm, the piezoelectric voltage sensitivity of in-plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.

Original language	English (US)
Pages (from-to)	1997-2000
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	85
Issue number	8
DOIs	https://doi.org/10.1111/j.1151-2916.2002.tb00394.x
State	Published - Aug 2002

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/j.1151-2916.2002.tb00394.x

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@article{6707992a856d49ada29468f3ee4f850e,

title = "In-plane polarized 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films",

abstract = "Ferroelectric 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were deposited on ZrO2/SiO2/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm2) than for through-the-thickness polarized PMN-PT thin films (10-12 μC/cm2) deposited on Pt/Ti/Si substrates. For a ringer spacing of 20 μm, the piezoelectric voltage sensitivity of in-plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.",

author = "Qifa Zhou and Qingqi Zhang and Baomin Xu and Susan Trolier-McKinstry",

year = "2002",

month = aug,

doi = "10.1111/j.1151-2916.2002.tb00394.x",

language = "English (US)",

volume = "85",

pages = "1997--2000",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "8",

}

TY - JOUR

T1 - In-plane polarized 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films

AU - Zhou, Qifa

AU - Zhang, Qingqi

AU - Xu, Baomin

AU - Trolier-McKinstry, Susan

PY - 2002/8

Y1 - 2002/8

N2 - Ferroelectric 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were deposited on ZrO2/SiO2/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm2) than for through-the-thickness polarized PMN-PT thin films (10-12 μC/cm2) deposited on Pt/Ti/Si substrates. For a ringer spacing of 20 μm, the piezoelectric voltage sensitivity of in-plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.

AB - Ferroelectric 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were deposited on ZrO2/SiO2/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm2) than for through-the-thickness polarized PMN-PT thin films (10-12 μC/cm2) deposited on Pt/Ti/Si substrates. For a ringer spacing of 20 μm, the piezoelectric voltage sensitivity of in-plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.

UR - https://www.scopus.com/pages/publications/0036686018

UR - https://www.scopus.com/pages/publications/0036686018#tab=citedBy

U2 - 10.1111/j.1151-2916.2002.tb00394.x

DO - 10.1111/j.1151-2916.2002.tb00394.x

M3 - Article

AN - SCOPUS:0036686018

SN - 0002-7820

VL - 85

SP - 1997

EP - 2000

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 8

ER -

In-plane polarized 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ thin films

Abstract

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