Abstract
We report preliminary electrical results on n+-InAs/n-GaAs contact structures grown by molecular beam epitaxy. The data indicate that the conduction-band discontinuity is sufficiently small to allow the formation of an ohmic contact to n-type GaAs for very heavily doped InAs layers. The structures require a short-term anneal to obtain a low resistance contact. An InAs layer which is only 200 Å thick is sufficient to provide a specific contact resistance of 10-6 Ω cm2. The contacts appear to be thermally stable for short-term anneals up to 900°C.
Original language | English (US) |
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Pages (from-to) | 1545-1547 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 49 |
Issue number | 22 |
DOIs | |
State | Published - 1986 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)