In situ contacts to GaAs based on InAs

S. L. Wright, R. F. Marks, S. Tiwari, T. N. Jackson, H. Baratte

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We report preliminary electrical results on n+-InAs/n-GaAs contact structures grown by molecular beam epitaxy. The data indicate that the conduction-band discontinuity is sufficiently small to allow the formation of an ohmic contact to n-type GaAs for very heavily doped InAs layers. The structures require a short-term anneal to obtain a low resistance contact. An InAs layer which is only 200 Å thick is sufficient to provide a specific contact resistance of 10-6 Ω cm2. The contacts appear to be thermally stable for short-term anneals up to 900°C.

Original languageEnglish (US)
Pages (from-to)1545-1547
Number of pages3
JournalApplied Physics Letters
Issue number22
StatePublished - 1986

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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