TY - JOUR
T1 - In Situ Dielectric Al2O3/β-Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
AU - Roy, Saurav
AU - Chmielewski, Adrian E.
AU - Bhattacharyya, Arkka
AU - Ranga, Praneeth
AU - Sun, Rujun
AU - Scarpulla, Michael A.
AU - Alem, Nasim
AU - Krishnamoorthy, Sriram
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/11
Y1 - 2021/11
N2 - High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 on β-Ga2O3 as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al2O3 is performed in the same reactor as Ga2O3 using trimethylaluminum and O2 as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al2O3/β-Ga2O3 interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (Dit) are measured using ultraviolet-assisted CV technique. The average Dit for the MOSCAP is determined to be 6.4 × 1011 cm−2eV−1. The conduction band offset of the Al2O3/ Ga2O3 interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al2O3/Ga2O3 interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm−1. This in situ Al2O3 dielectric on β-Ga2O3 with improved dielectric properties can enable Ga2O3-based high-performance devices.
AB - High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 on β-Ga2O3 as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al2O3 is performed in the same reactor as Ga2O3 using trimethylaluminum and O2 as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al2O3/β-Ga2O3 interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (Dit) are measured using ultraviolet-assisted CV technique. The average Dit for the MOSCAP is determined to be 6.4 × 1011 cm−2eV−1. The conduction band offset of the Al2O3/ Ga2O3 interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al2O3/Ga2O3 interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm−1. This in situ Al2O3 dielectric on β-Ga2O3 with improved dielectric properties can enable Ga2O3-based high-performance devices.
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U2 - 10.1002/aelm.202100333
DO - 10.1002/aelm.202100333
M3 - Article
AN - SCOPUS:85113632192
SN - 2199-160X
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 11
M1 - 2100333
ER -