High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 on β-Ga2O3 as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al2O3 is performed in the same reactor as Ga2O3 using trimethylaluminum and O2 as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al2O3/β-Ga2O3 interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (Dit) are measured using ultraviolet-assisted CV technique. The average Dit for the MOSCAP is determined to be 6.4 × 1011 cm−2eV−1. The conduction band offset of the Al2O3/ Ga2O3 interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al2O3/Ga2O3 interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm−1. This in situ Al2O3 dielectric on β-Ga2O3 with improved dielectric properties can enable Ga2O3-based high-performance devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials