In-Situ Encrypted NAND FeFET Array for Secure Storage and Compute-in-Memory

Zijian Zhao, Yixin Xu, James Read, Po Kai Hsu, Yixin Qin, Tzu Jung Huang, Suhwan Lim, Kijoon Kim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Thomas Kampfe, Sumitha George, Xiao Gong, Suman Datta, Shimeng Yu, Vijaykrishnan Narayanan, Kai Ni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we present a lightweight in-situ encryption/decryption technique for high-density NAND memory, aiming to meet the growing need for data privacy and security in storage and computing applications. Using ferroelectric FET (FeFET) as a technology platform for demonstration, we show that: i) using a XOR-based cipher, the encryption/decryption can be simply mapped to in-situ array operations, where the encrypted cipher texts are stored as complementary threshold voltage (VTH) states of two consecutive FeFETs in a NAND string and decryption can be simply realized through read operations with key-dependent read gate biases; ii) the proposed technique is scalable to multi-level cells (MLC) by encrypting and decrypting bit-by-bit, thereby significantly increasing the encrypted memory density; iii) a unique advantage of applying XOR-based cipher on NAND array is its capability of supporting high-density and secure compute-in-memory (CiM) (e.g., matrix vector multiplication) with encrypted weights, which is beyond the capability of conventional advanced encryption standard (AES) engine; iv) with integrated NAND FeFET array, we have successfully demonstrated encryption and decryption operations of single-level cell (SLC), MLC, and CiM, showing great promise of the technique.

Original languageEnglish (US)
Title of host publication2023 International Electron Devices Meeting, IEDM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350327670
DOIs
StatePublished - 2023
Event2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States
Duration: Dec 9 2023Dec 13 2023

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2023 International Electron Devices Meeting, IEDM 2023
Country/TerritoryUnited States
CitySan Francisco
Period12/9/2312/13/23

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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