In situ growth of MgB2 thin films by hybrid physical-chemical vapor deposition

X. X. Xi; X. H. Zeng; A. V. Pogrebnyakov; S. Y. Xu; Qi Li; Yu Zhong; C. O. Brubaker; Zi Kui Liu; E. M. Lysczek; J. M. Redwing; J. Lettieri; D. G. Schlom; W. Tian; X. Q. Pan

doi:10.1109/TASC.2003.812209

In situ growth of MgB₂ thin films by hybrid physical-chemical vapor deposition

X. X. Xi, X. H. Zeng, A. V. Pogrebnyakov, S. Y. Xu, Qi Li, Yu Zhong, C. O. Brubaker, Zi Kui Liu, E. M. Lysczek, J. M. Redwing, J. Lettieri, D. G. Schlom, W. Tian, X. Q. Pan

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

We have carried out thermodynamics studies of the Mg-B system with the calculation of phase diagrams (CALPHAD) modeling technique and found that the superconductor MgB₂ phase is thermodynamically stable only under fairly high Mg pressures at elevated temperatures. This has lead us to the investigation of chemical vapor deposition in which the pressure during the film deposition can be high. Although the initial effort on metal-organic chemical vapor deposition (MOCVD) was not successful due to carbon contamination, a unique hybrid physical-chemical vapor deposition (HPCVD) technique has successfully produced high quality in situ MgB₂ films. The epitaxially-grown MgB₂ films show high transition temperature and low resistivity comparable to the best bulk samples, and their surfaces are smooth. In this paper, the details of the technique and the results of the HPCVD films are presented.

Original language	English (US)
Pages (from-to)	3233-3237
Number of pages	5
Journal	IEEE Transactions on Applied Superconductivity
Volume	13
Issue number	2 III
DOIs	https://doi.org/10.1109/TASC.2003.812209
State	Published - Jun 2003
Event	2002 Applied Superconductivity Conference - Houston, TX, United States Duration: Aug 4 2002 → Aug 9 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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Xi, X. X., Zeng, X. H., Pogrebnyakov, A. V., Xu, S. Y., Li, Q., Zhong, Y., Brubaker, C. O., Liu, Z. K., Lysczek, E. M., Redwing, J. M., Lettieri, J., Schlom, D. G., Tian, W., & Pan, X. Q. (2003). In situ growth of MgB₂ thin films by hybrid physical-chemical vapor deposition. IEEE Transactions on Applied Superconductivity, 13(2 III), 3233-3237. https://doi.org/10.1109/TASC.2003.812209

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title = "In situ growth of MgB2 thin films by hybrid physical-chemical vapor deposition",

abstract = "We have carried out thermodynamics studies of the Mg-B system with the calculation of phase diagrams (CALPHAD) modeling technique and found that the superconductor MgB2 phase is thermodynamically stable only under fairly high Mg pressures at elevated temperatures. This has lead us to the investigation of chemical vapor deposition in which the pressure during the film deposition can be high. Although the initial effort on metal-organic chemical vapor deposition (MOCVD) was not successful due to carbon contamination, a unique hybrid physical-chemical vapor deposition (HPCVD) technique has successfully produced high quality in situ MgB2 films. The epitaxially-grown MgB2 films show high transition temperature and low resistivity comparable to the best bulk samples, and their surfaces are smooth. In this paper, the details of the technique and the results of the HPCVD films are presented.",

author = "Xi, {X. X.} and Zeng, {X. H.} and Pogrebnyakov, {A. V.} and Xu, {S. Y.} and Qi Li and Yu Zhong and Brubaker, {C. O.} and Liu, {Zi Kui} and Lysczek, {E. M.} and Redwing, {J. M.} and J. Lettieri and Schlom, {D. G.} and W. Tian and Pan, {X. Q.}",

note = "Funding Information: Manuscript received August 5, 2002. This work was supported in part by ONR under Grants N00014-00-1-0294 (XXX) and N0014-01-1-0006 (JMR), by NSF under Grant DMR-9876266 and DMR-9972973 (QL), DMR-9875405 and DMR-9871177 (XQP), DMR-9983532 (ZKL), and by DOE under Grant DE-FG02-97ER45638 (DGS).; 2002 Applied Superconductivity Conference ; Conference date: 04-08-2002 Through 09-08-2002",

year = "2003",

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doi = "10.1109/TASC.2003.812209",

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T1 - In situ growth of MgB2 thin films by hybrid physical-chemical vapor deposition

AU - Xi, X. X.

AU - Zeng, X. H.

AU - Pogrebnyakov, A. V.

AU - Xu, S. Y.

AU - Li, Qi

AU - Zhong, Yu

AU - Brubaker, C. O.

AU - Liu, Zi Kui

AU - Lysczek, E. M.

AU - Redwing, J. M.

AU - Lettieri, J.

AU - Schlom, D. G.

AU - Tian, W.

AU - Pan, X. Q.

N1 - Funding Information: Manuscript received August 5, 2002. This work was supported in part by ONR under Grants N00014-00-1-0294 (XXX) and N0014-01-1-0006 (JMR), by NSF under Grant DMR-9876266 and DMR-9972973 (QL), DMR-9875405 and DMR-9871177 (XQP), DMR-9983532 (ZKL), and by DOE under Grant DE-FG02-97ER45638 (DGS).

PY - 2003/6

Y1 - 2003/6

N2 - We have carried out thermodynamics studies of the Mg-B system with the calculation of phase diagrams (CALPHAD) modeling technique and found that the superconductor MgB2 phase is thermodynamically stable only under fairly high Mg pressures at elevated temperatures. This has lead us to the investigation of chemical vapor deposition in which the pressure during the film deposition can be high. Although the initial effort on metal-organic chemical vapor deposition (MOCVD) was not successful due to carbon contamination, a unique hybrid physical-chemical vapor deposition (HPCVD) technique has successfully produced high quality in situ MgB2 films. The epitaxially-grown MgB2 films show high transition temperature and low resistivity comparable to the best bulk samples, and their surfaces are smooth. In this paper, the details of the technique and the results of the HPCVD films are presented.

AB - We have carried out thermodynamics studies of the Mg-B system with the calculation of phase diagrams (CALPHAD) modeling technique and found that the superconductor MgB2 phase is thermodynamically stable only under fairly high Mg pressures at elevated temperatures. This has lead us to the investigation of chemical vapor deposition in which the pressure during the film deposition can be high. Although the initial effort on metal-organic chemical vapor deposition (MOCVD) was not successful due to carbon contamination, a unique hybrid physical-chemical vapor deposition (HPCVD) technique has successfully produced high quality in situ MgB2 films. The epitaxially-grown MgB2 films show high transition temperature and low resistivity comparable to the best bulk samples, and their surfaces are smooth. In this paper, the details of the technique and the results of the HPCVD films are presented.

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ER -

In situ growth of MgB₂ thin films by hybrid physical-chemical vapor deposition

Abstract

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