In situ laser annealing during growth of Pb(Zr0.52Ti 0.48)O3 thin films

Adarsh Rajashekhar, Austin Fox, S. S.N. Bharadwaja, Susan Trolier-Mckinstry

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A pulsed laser deposition system with in situ laser annealing was utilized to grow Pb(Zr0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of ∼370°C. Polycrystalline 1.1 μm thick films exhibited columnar grains with small grain sizes (∼30 nm). The films showed well-saturated hysteresis loops (with ∼25 μC/cm2 remanent polarization, ∼50 kV/cm coercive field) and exhibited loss tangents <2.5% with a permittivity of ∼730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O 3 sol-gel seed layers, while {001} films were prepared on (100) SrTiO3 single crystals.

Original languageEnglish (US)
Article number032908
JournalApplied Physics Letters
Issue number3
StatePublished - Jul 15 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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