In situ laser annealing during growth of Pb(Zr0.52Ti 0.48)O3 thin films

Adarsh Rajashekhar; Austin Fox; S. S.N. Bharadwaja; Susan Trolier-Mckinstry

doi:10.1063/1.4816157

In situ laser annealing during growth of Pb(Zr_0.52Ti _0.48)O₃ thin films

Adarsh Rajashekhar, Austin Fox, S. S.N. Bharadwaja, Susan Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A pulsed laser deposition system with in situ laser annealing was utilized to grow Pb(Zr_0.52Ti_0.48)O₃ thin films on a laser crystallized Pb(Zr_0.20Ti_0.80)O₃ seed layer, at a temperature of ∼370°C. Polycrystalline 1.1 μm thick films exhibited columnar grains with small grain sizes (∼30 nm). The films showed well-saturated hysteresis loops (with ∼25 μC/cm² remanent polarization, ∼50 kV/cm coercive field) and exhibited loss tangents <2.5% with a permittivity of ∼730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr_0.52Ti_0.48)O₃ films were grown on oriented (111) Pb(Zr_0.30Ti_0.70)O ₃ sol-gel seed layers, while {001} films were prepared on (100) SrTiO₃ single crystals.

Original language	English (US)
Article number	032908
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4816157
State	Published - Jul 15 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4816157

Cite this

@article{13cf1b62b1e94df48f17e8d105cd6f24,

title = "In situ laser annealing during growth of Pb(Zr0.52Ti 0.48)O3 thin films",

abstract = "A pulsed laser deposition system with in situ laser annealing was utilized to grow Pb(Zr0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of ∼370°C. Polycrystalline 1.1 μm thick films exhibited columnar grains with small grain sizes (∼30 nm). The films showed well-saturated hysteresis loops (with ∼25 μC/cm2 remanent polarization, ∼50 kV/cm coercive field) and exhibited loss tangents <2.5% with a permittivity of ∼730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O 3 sol-gel seed layers, while {001} films were prepared on (100) SrTiO3 single crystals.",

author = "Adarsh Rajashekhar and Austin Fox and Bharadwaja, {S. S.N.} and Susan Trolier-Mckinstry",

note = "Funding Information: This work was sponsored by a National Security Science and Engineering Faculty Fellowship (NSSEFF) program. The author would like to sincerely acknowledge members of the Penn State Materials Research Institute (MRI) staff, Chris Jabco, Tim Klinger, and Bill Drawl, for their involvement in the system construction and design.",

year = "2013",

month = jul,

day = "15",

doi = "10.1063/1.4816157",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - In situ laser annealing during growth of Pb(Zr0.52Ti 0.48)O3 thin films

AU - Rajashekhar, Adarsh

AU - Fox, Austin

AU - Bharadwaja, S. S.N.

AU - Trolier-Mckinstry, Susan

N1 - Funding Information: This work was sponsored by a National Security Science and Engineering Faculty Fellowship (NSSEFF) program. The author would like to sincerely acknowledge members of the Penn State Materials Research Institute (MRI) staff, Chris Jabco, Tim Klinger, and Bill Drawl, for their involvement in the system construction and design.

PY - 2013/7/15

Y1 - 2013/7/15

N2 - A pulsed laser deposition system with in situ laser annealing was utilized to grow Pb(Zr0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of ∼370°C. Polycrystalline 1.1 μm thick films exhibited columnar grains with small grain sizes (∼30 nm). The films showed well-saturated hysteresis loops (with ∼25 μC/cm2 remanent polarization, ∼50 kV/cm coercive field) and exhibited loss tangents <2.5% with a permittivity of ∼730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O 3 sol-gel seed layers, while {001} films were prepared on (100) SrTiO3 single crystals.

AB - A pulsed laser deposition system with in situ laser annealing was utilized to grow Pb(Zr0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of ∼370°C. Polycrystalline 1.1 μm thick films exhibited columnar grains with small grain sizes (∼30 nm). The films showed well-saturated hysteresis loops (with ∼25 μC/cm2 remanent polarization, ∼50 kV/cm coercive field) and exhibited loss tangents <2.5% with a permittivity of ∼730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O 3 sol-gel seed layers, while {001} films were prepared on (100) SrTiO3 single crystals.

UR - http://www.scopus.com/inward/record.url?scp=84881535646&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881535646&partnerID=8YFLogxK

U2 - 10.1063/1.4816157

DO - 10.1063/1.4816157

M3 - Article

AN - SCOPUS:84881535646

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032908

ER -

In situ laser annealing during growth of Pb(Zr_0.52Ti _0.48)O₃ thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this