@article{c49452178fd240ff836bcf43b8a43300,
title = "In Situ Observation of β-Ga 2 O 3 Schottky Diode Failure under Forward Biasing Condition",
abstract = "In this article, we investigate defect nucleation leading to device degradation in \beta -Ga2O3 Schottky barrier diodes by operating them inside a transmission electron microscope. Such in situ approach allows simultaneous visualization and quantitative device characterization, not possible with the current art of postmortem microscopy. High current density and associated mechanical and thermal fields are shown to induce different types of crystal defects, from vacancy cluster and stacking fault to microcrack generation prior to failure. These structural defects can act as traps for carrier and cause device failure at high biasing voltage. Fundamental insights on nucleation of these defects and their evolution are important from materials reliability and device design perspectives.",
author = "Zahabul Islam and Minghan Xian and Aman Haque and Fan Ren and Marko Tadjer and Nicholas Glavin and Stephen Pearton",
note = "Funding Information: Manuscript received March 26, 2020; revised May 13, 2020; accepted June 2, 2020. Date of publication June 19, 2020; date of current version July 23, 2020. The work of Zahabul Islam and Aman Haque was supported by the National Science Foundation, USA, through the Civil, Mechanical and Manufacturing Innovation (CMMI) Nanomanufac-turing under Grant 1760931. The work of Minghan Xian, Fan Ren, and Stephen Pearton was supported in part by HDTRA1-17-1-0011 (Jacob Calkins, monitor) and in part by NSF under Grant DMR 1856662 (Tania Paskova). The work of Marko Tadjer was supported by the Office of Naval Research (ONR). The work of Nicholas Glavin was supported by the Air Force Office of Scientific Research under Grant FA9550-19RYCOR050. The review of this article was arranged by Editor S. Chowdhury. (Corresponding author: Aman Haque.) Zahabul Islam and Aman Haque are with the Department of Mechanical Engineering, Pennsylvania State University, University Park, PA 16802 USA (e-mail: mqi5074@psu.edu; mah37@psu.edu). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = aug,
doi = "10.1109/TED.2020.3000441",
language = "English (US)",
volume = "67",
pages = "3056--3061",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}