In situ process control of trilayer gate-stacks on p-germanium with 0.85-nm EOT

Keyphrases

• Process Control 100%
• Aluminum Oxide 100%
• Trilayer 100%
• Germanium 100%
• GeOx 100%
• In-situ Process 100%
• Gate Stack 100%
• Dielectric 66%
• HfO2 66%
• In Situ 33%
• Layer Thickness 33%
• Process Optimization 33%
• Downscaling 33%
• Reactor 33%
• Pre-oxidation 33%
• Native Oxide 33%
• Hydrogen Plasma 33%
• Well-behaved 33%
• Atomic Layer Deposition 33%
• Equivalent Oxide Thickness 33%
• Gate Leakage 33%
• Surface Passivation 33%
• Ge Surface 33%
• Thermal Atomic Layer Deposition 33%
• Oxide Removal 33%
• In Situ Spectroscopic Ellipsometry 33%
• Semiconductor Interfaces 33%
• Low-k Layer 33%
• Thickness Scaling 33%

Material Science

• Al2O3 100%
• Germanium 100%
• Process Control 100%
• Oxide Compound 66%
• Dielectric Material 33%
• Surface Passivation 33%
• Dielectric-Semiconductor Interface 33%