Keyphrases
AlN Buffer Layer
50%
Compressive Stress
50%
Cross-sectional Transmission Electron Microscopy
25%
Curvature Measurement
25%
Film Microstructure
25%
Film Stress
25%
GaN Films
25%
GaN Growth
100%
GaN Layers
50%
Growth Stress
25%
In Situ
25%
In-situ Test
100%
Ion Implantation
100%
Lattice Mismatch
25%
Low Density
25%
Metal-organic Chemical Vapor Deposition (MOCVD)
25%
Microscopy Characterization
25%
N+ Ion
25%
Optical Microscopy
25%
Post-growth
75%
Si Substrate
100%
Si(111) Substrate
25%
Structural Characterization
25%
Tensile Stress
50%
Thermal Expansion Mismatch
25%
Transmission Electron Microscopy Images
25%
Wafer Curvature
25%
Engineering
Buffer Layer
100%
Channelling
100%
Chemical Vapor Deposition
50%
Compressive Stress
100%
Implanted Sample
100%
In Situ Stress Measurement
100%
Lattice Mismatch
50%
Si Substrate
100%
Tensile Stress σ
100%
Vapor Deposition
50%
Material Science
Aluminum Nitride
100%
Buffer Layer
50%
Chemical Vapor Deposition
25%
Density
50%
Film
75%
In Situ Stress Measurement
100%
Lattice Mismatch
25%
Thermal Expansion
25%
Transmission Electron Microscopy
25%
Ultimate Tensile Strength
50%