Incorporation of the dopants Si and Be into GaAs nanowires

M. Hilse; M. Ramsteiner; S. Breuer; L. Geelhaar; H. Riechert

doi:10.1063/1.3428358

Incorporation of the dopants Si and Be into GaAs nanowires

M. Hilse, M. Ramsteiner, S. Breuer, L. Geelhaar, H. Riechert

2D Crystal Consortium

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Abstract

We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high Be doping concentrations cause a kinking and tapering of the NWRs. We investigated local vibrational modes by means of resonant Raman scattering to determine the incorporation sites of the dopant atoms. For Si doping, both donors on Ga sites and acceptors on As sites have been observed. Be was found to be incorporated as an acceptor on Ga sites. However, at high doping concentration, Be is also incorporated on interstitial sites.

Original language	English (US)
Article number	193104
Journal	Applied Physics Letters
Volume	96
Issue number	19
DOIs	https://doi.org/10.1063/1.3428358
State	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3428358

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title = "Incorporation of the dopants Si and Be into GaAs nanowires",

abstract = "We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high Be doping concentrations cause a kinking and tapering of the NWRs. We investigated local vibrational modes by means of resonant Raman scattering to determine the incorporation sites of the dopant atoms. For Si doping, both donors on Ga sites and acceptors on As sites have been observed. Be was found to be incorporated as an acceptor on Ga sites. However, at high doping concentration, Be is also incorporated on interstitial sites.",

author = "M. Hilse and M. Ramsteiner and S. Breuer and L. Geelhaar and H. Riechert",

year = "2010",

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language = "English (US)",

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journal = "Applied Physics Letters",

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AU - Hilse, M.

AU - Ramsteiner, M.

AU - Breuer, S.

AU - Geelhaar, L.

AU - Riechert, H.

PY - 2010

Y1 - 2010

N2 - We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high Be doping concentrations cause a kinking and tapering of the NWRs. We investigated local vibrational modes by means of resonant Raman scattering to determine the incorporation sites of the dopant atoms. For Si doping, both donors on Ga sites and acceptors on As sites have been observed. Be was found to be incorporated as an acceptor on Ga sites. However, at high doping concentration, Be is also incorporated on interstitial sites.

AB - We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high Be doping concentrations cause a kinking and tapering of the NWRs. We investigated local vibrational modes by means of resonant Raman scattering to determine the incorporation sites of the dopant atoms. For Si doping, both donors on Ga sites and acceptors on As sites have been observed. Be was found to be incorporated as an acceptor on Ga sites. However, at high doping concentration, Be is also incorporated on interstitial sites.

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IS - 19

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Incorporation of the dopants Si and Be into GaAs nanowires

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