@inproceedings{ced1d45d237a4208aa4e6c3cebdf88e8,
title = "Increasing the switching frequency of GaN HFET converters",
abstract = "GaN-on-Si switches, hard-switching 400V at 1MHz, have demonstrated power conversion with 96% efficiency, outperforming Si MOSFETs. This performance was achieved using hybrid integration of bare GaN and gate driver die, resulting in clean waveforms with a slew rate of 100V/ns. The new Si Super-Junction (SJ) MOSFETs have a hard-switching figure-of-merit (FOM) which is approaching that of GaN HFETs. However, GaN's FOM for soft-switching is more than 9X better than Si SJMOSFET. Using this FOM, GaN ICs in 400V soft-switching converters are predicted to switch beyond 100MHz.",
author = "Brian Hughes and Rongming Chu and James Lazar and Karim Boutros",
year = "2015",
month = feb,
day = "16",
doi = "10.1109/IEDM.2015.7409714",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "16.7.1--16.7.4",
booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",
address = "United States",
note = "61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",
}