Independently-controlled-gate FinFET 6T SRAM cell design for leakage current reduction and enhanced read access speed
- Kaisheng Ma
- , Huichu Liu
- , Yang Xiao
- , Yang Zheng
- , Xueqing Li
- , Sumeet Kumar Gupta
- , Yuan Xie
- , Vijaykrishnan Narayanan
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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