Independently-controlled-gate FinFET 6T SRAM cell design for leakage current reduction and enhanced read access speed

Kaisheng Ma, Huichu Liu, Yang Xiao, Yang Zheng, Xueqing Li, Sumeet Kumar Gupta, Yuan Xie, Vijaykrishnan Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

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Engineering & Materials Science