Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

Arun V. Thathachary; N. Agrawal; K. K. Bhuwalka; M. Cantoro; Y. C. Heo; Guy Lavallee; S. Maeda; S. Datta

doi:10.1109/VLSIT.2015.7223677

Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

Arun V. Thathachary, N. Agrawal, K. K. Bhuwalka, M. Cantoro, Y. C. Heo, Guy Lavallee, S. Maeda, S. Datta

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

16 Scopus citations

Abstract

This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In_0.7Ga_0.3As QW FF. Peak mobility of 3,531 cm²/V-sec and 3,950 cm²/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (W_fin) of 40nm and L_G = 2μm. Peak g_m of 480 μS/μm, 541 μS/um; I_DSAT of 121 μA/μm, 135 μA/μm; and SS_SAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at L_G=300nm (V_D = 0.5V, I_OFF=100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.

Original language	English (US)
Title of host publication	2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	T208-T209
ISBN (Electronic)	9784863485013
DOIs	https://doi.org/10.1109/VLSIT.2015.7223677
State	Published - Aug 25 2015
Event	Symposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan Duration: Jun 16 2015 → Jun 18 2015

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2015-August
ISSN (Print)	0743-1562

Other

Other	Symposium on VLSI Technology, VLSI Technology 2015
Country/Territory	Japan
City	Kyoto
Period	6/16/15 → 6/18/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/VLSIT.2015.7223677

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Thathachary, A. V., Agrawal, N., Bhuwalka, K. K., Cantoro, M., Heo, Y. C., Lavallee, G., Maeda, S., & Datta, S. (2015). Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (pp. T208-T209). Article 7223677 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223677

@inproceedings{c4ad83623736407d9490ccef0454cd00,

title = "Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs",

abstract = "This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In0.7Ga0.3As QW FF. Peak mobility of 3,531 cm2/V-sec and 3,950 cm2/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (Wfin) of 40nm and LG = 2μm. Peak gm of 480 μS/μm, 541 μS/um; IDSAT of 121 μA/μm, 135 μA/μm; and SSSAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at LG=300nm (VD = 0.5V, IOFF=100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.",

author = "Thathachary, {Arun V.} and N. Agrawal and Bhuwalka, {K. K.} and M. Cantoro and Heo, {Y. C.} and Guy Lavallee and S. Maeda and S. Datta",

year = "2015",

month = aug,

day = "25",

doi = "10.1109/VLSIT.2015.7223677",

language = "English (US)",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "T208--T209",

booktitle = "2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers",

address = "United States",

note = "Symposium on VLSI Technology, VLSI Technology 2015 ; Conference date: 16-06-2015 Through 18-06-2015",

}

Thathachary, AV, Agrawal, N, Bhuwalka, KK, Cantoro, M, Heo, YC, Lavallee, G, Maeda, S & Datta, S 2015, Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs. in 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers., 7223677, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. T208-T209, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 6/16/15. https://doi.org/10.1109/VLSIT.2015.7223677

Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs. / Thathachary, Arun V.; Agrawal, N.; Bhuwalka, K. K. et al.
2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2015. p. T208-T209 7223677 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

AU - Thathachary, Arun V.

AU - Agrawal, N.

AU - Bhuwalka, K. K.

AU - Cantoro, M.

AU - Heo, Y. C.

AU - Lavallee, Guy

AU - Maeda, S.

AU - Datta, S.

PY - 2015/8/25

Y1 - 2015/8/25

N2 - This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In0.7Ga0.3As QW FF. Peak mobility of 3,531 cm2/V-sec and 3,950 cm2/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (Wfin) of 40nm and LG = 2μm. Peak gm of 480 μS/μm, 541 μS/um; IDSAT of 121 μA/μm, 135 μA/μm; and SSSAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at LG=300nm (VD = 0.5V, IOFF=100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.

AB - This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In0.7Ga0.3As QW FF. Peak mobility of 3,531 cm2/V-sec and 3,950 cm2/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (Wfin) of 40nm and LG = 2μm. Peak gm of 480 μS/μm, 541 μS/um; IDSAT of 121 μA/μm, 135 μA/μm; and SSSAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at LG=300nm (VD = 0.5V, IOFF=100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.

UR - http://www.scopus.com/inward/record.url?scp=84950977302&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950977302&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2015.7223677

DO - 10.1109/VLSIT.2015.7223677

M3 - Conference contribution

AN - SCOPUS:84950977302

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - T208-T209

BT - 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Symposium on VLSI Technology, VLSI Technology 2015

Y2 - 16 June 2015 through 18 June 2015

ER -

Thathachary AV, Agrawal N, Bhuwalka KK, Cantoro M, Heo YC, Lavallee G et al. Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2015. p. T208-T209. 7223677. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2015.7223677

Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

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