Abstract
Nickel monosilicide (NiSi) is a leading contender to replace the currently used class of silicides for contacts to the source, drain and gate regions in Complimentary Metal-Oxide-Semiconductor (CMOS) circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film shows a significant decrease under hydrogenation of the Si substrate prior to Ni evaporation/anneal for projected silicidation temperatures below 600°C. Correspondingly, the Si region near the interface is decorated with defects. At higher silicidation temperatures, the sheet resistance rises along with greater in-diffusion of Ni into the hydrogenated Si samples. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy and Hall effect measurements are used to characterize the samples.
Original language | English (US) |
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Pages (from-to) | 159-164 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 810 |
DOIs | |
State | Published - 2004 |
Event | Silicon Front-End Junction Formation - Physics and Technology - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 15 2004 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering