Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

M. V. Warren, J. C. Canniff, H. Chi, F. Naab, V. A. Stoica, R. Clarke, C. Uher, R. S. Goldman

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.

Original languageEnglish (US)
Article number065101
JournalJournal of Applied Physics
Volume117
Issue number6
DOIs
StatePublished - Feb 14 2015

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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