Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

M. V. Warren; J. C. Canniff; H. Chi; F. Naab; V. A. Stoica; R. Clarke; C. Uher; R. S. Goldman

doi:10.1063/1.4906992

Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

M. V. Warren, J. C. Canniff, H. Chi, F. Naab, V. A. Stoica, R. Clarke, C. Uher, R. S. Goldman

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.

Original language	English (US)
Article number	065101
Journal	Journal of Applied Physics
Volume	117
Issue number	6
DOIs	https://doi.org/10.1063/1.4906992
State	Published - Feb 14 2015

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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title = "Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs",

abstract = "We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.",

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T1 - Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

AU - Warren, M. V.

AU - Canniff, J. C.

AU - Chi, H.

AU - Naab, F.

AU - Stoica, V. A.

AU - Clarke, R.

AU - Uher, C.

AU - Goldman, R. S.

PY - 2015/2/14

Y1 - 2015/2/14

N2 - We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.

AB - We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.

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Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

Abstract

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