Abstract
Negative capacitance FET (NCFET) has become a research topic of interest in recent years due to its interesting properties. It has the ability to retain the polarization state even in the absence of electric field. By virtue of this ability, it can be designed as a nonvolatile memory. NCFET can also be configured as a steep-slope switch and thereby providing energy efficiency while used in digital designs. However, the benefits offered by NCFETs for analog circuit domain has not well reported. In this paper, we analyze the impact of body effect on an NCFET-based bootstrapped switch and illustrate that the linearity of NCFET-based switch can be improved resulting from the internal amplification of the employed NCFET. When designed at 0.6-V supply (Vdd), results show that the variation of the on resistance of the bootstrapped switch is about 67Ω during the sampling period, which is one-third smaller than the MOSFET-based switch. As a result, the sampling linearity is improved and the distortion at the output can be decreased. On condition that the Nyquist input frequency is 10 MHz, the proposed NCFET-based bootstrapped switch succeeds in improving the total harmonic distortion performance by 16.7 dB, compared with that of a conventional MOSFET-based bootstrapped switch.
| Original language | English (US) |
|---|---|
| Article number | 8424879 |
| Pages (from-to) | 3909-3914 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 65 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2018 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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