Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films

Xiaotian Zhang; Zakaria Y. Al Balushi; Fu Zhang; Tanushree H. Choudhury; Sarah M. Eichfeld; Nasim Alem; Thomas N. Jackson; Joshua A. Robinson; Joan M. Redwing

doi:10.1007/s11664-016-5033-0

Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe₂ Thin Films

Xiaotian Zhang, Zakaria Y. Al Balushi, Fu Zhang, Tanushree H. Choudhury, Sarah M. Eichfeld, Nasim Alem, Thomas N. Jackson, Joshua A. Robinson, Joan M. Redwing

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe₂) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)₆) and dimethyl selenide ((CH₃)₂Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe₂ domains. The use of hydrogen selenide (H₂Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe₂ films.

Original language	English (US)
Pages (from-to)	6273-6279
Number of pages	7
Journal	Journal of Electronic Materials
Volume	45
Issue number	12
DOIs	https://doi.org/10.1007/s11664-016-5033-0
State	Published - Dec 1 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films",

abstract = "Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.",

author = "Xiaotian Zhang and {Al Balushi}, {Zakaria Y.} and Fu Zhang and Choudhury, {Tanushree H.} and Eichfeld, {Sarah M.} and Nasim Alem and Jackson, {Thomas N.} and Robinson, {Joshua A.} and Redwing, {Joan M.}",

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doi = "10.1007/s11664-016-5033-0",

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AU - Zhang, Xiaotian

AU - Al Balushi, Zakaria Y.

AU - Zhang, Fu

AU - Choudhury, Tanushree H.

AU - Eichfeld, Sarah M.

AU - Alem, Nasim

AU - Jackson, Thomas N.

AU - Robinson, Joshua A.

AU - Redwing, Joan M.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.

AB - Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.

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Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe₂ Thin Films

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