Influence of embedded indium nanocrystals on GaAs thermoelectric properties

M. V. Warren; J. C. Canniff; H. Chi; E. Morag; F. Naab; V. A. Stoica; R. Clarke; C. Uher; R. S. Goldman

doi:10.1063/1.4816087

Influence of embedded indium nanocrystals on GaAs thermoelectric properties

M. V. Warren
, J. C. Canniff
, H. Chi
, E. Morag
, F. Naab
, V. A. Stoica
, R. Clarke
, C. Uher
, R. S. Goldman

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have examined the formation of embedded In nanocrystals (NCs) and their influence on the free carrier concentration, resistivity, thermal conductivity, and Seebeck coefficient (S) of GaAs. The In nanocrystals enhance the free carrier concentration, while electron and phonon scattering at crystallite boundaries increases the resistivity and reduces the thermal conductivity. Furthermore, the room temperature Seebeck coefficient exhibits a 25% increase due to carrier trapping. Application of this approach to more heavily doped GaAs layers will likely lead to further increases in S and reductions in resistivity.

Original language	English (US)
Article number	043704
Journal	Journal of Applied Physics
Volume	114
Issue number	4
DOIs	https://doi.org/10.1063/1.4816087
State	Published - Jul 28 2013

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
General Physics and Astronomy

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10.1063/1.4816087

Cite this

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title = "Influence of embedded indium nanocrystals on GaAs thermoelectric properties",

abstract = "We have examined the formation of embedded In nanocrystals (NCs) and their influence on the free carrier concentration, resistivity, thermal conductivity, and Seebeck coefficient (S) of GaAs. The In nanocrystals enhance the free carrier concentration, while electron and phonon scattering at crystallite boundaries increases the resistivity and reduces the thermal conductivity. Furthermore, the room temperature Seebeck coefficient exhibits a 25\% increase due to carrier trapping. Application of this approach to more heavily doped GaAs layers will likely lead to further increases in S and reductions in resistivity.",

author = "Warren, \{M. V.\} and Canniff, \{J. C.\} and H. Chi and E. Morag and F. Naab and Stoica, \{V. A.\} and R. Clarke and C. Uher and Goldman, \{R. S.\}",

note = "Funding Information: This research was supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Science under Award Number DE-SC0000957. J.C.C. was supported in part by the AFOSR through the MURI program under Contract No. FA9950-08-1-0340. E.M. was supported by the National Science Foundation through the Materials Research Science and Engineering Center at the University of Michigan, grant DMR-1120923.",

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day = "28",

doi = "10.1063/1.4816087",

language = "English (US)",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Influence of embedded indium nanocrystals on GaAs thermoelectric properties

AU - Warren, M. V.

AU - Canniff, J. C.

AU - Chi, H.

AU - Morag, E.

AU - Naab, F.

AU - Stoica, V. A.

AU - Clarke, R.

AU - Uher, C.

AU - Goldman, R. S.

N1 - Funding Information: This research was supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Science under Award Number DE-SC0000957. J.C.C. was supported in part by the AFOSR through the MURI program under Contract No. FA9950-08-1-0340. E.M. was supported by the National Science Foundation through the Materials Research Science and Engineering Center at the University of Michigan, grant DMR-1120923.

PY - 2013/7/28

Y1 - 2013/7/28

N2 - We have examined the formation of embedded In nanocrystals (NCs) and their influence on the free carrier concentration, resistivity, thermal conductivity, and Seebeck coefficient (S) of GaAs. The In nanocrystals enhance the free carrier concentration, while electron and phonon scattering at crystallite boundaries increases the resistivity and reduces the thermal conductivity. Furthermore, the room temperature Seebeck coefficient exhibits a 25% increase due to carrier trapping. Application of this approach to more heavily doped GaAs layers will likely lead to further increases in S and reductions in resistivity.

AB - We have examined the formation of embedded In nanocrystals (NCs) and their influence on the free carrier concentration, resistivity, thermal conductivity, and Seebeck coefficient (S) of GaAs. The In nanocrystals enhance the free carrier concentration, while electron and phonon scattering at crystallite boundaries increases the resistivity and reduces the thermal conductivity. Furthermore, the room temperature Seebeck coefficient exhibits a 25% increase due to carrier trapping. Application of this approach to more heavily doped GaAs layers will likely lead to further increases in S and reductions in resistivity.

UR - https://www.scopus.com/pages/publications/84882341142

UR - https://www.scopus.com/pages/publications/84882341142#tab=citedBy

U2 - 10.1063/1.4816087

DO - 10.1063/1.4816087

M3 - Article

AN - SCOPUS:84882341142

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 043704

ER -

Influence of embedded indium nanocrystals on GaAs thermoelectric properties

Abstract

All Science Journal Classification (ASJC) codes

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