Influence of external electric fields on electronic response and bandstructure of carbon nanotubes

Yan Li; S. V. Rotkin; U. Ravaioli

doi:10.1109/NANO.2003.1231699

Influence of external electric fields on electronic response and bandstructure of carbon nanotubes

Yan Li, S. V. Rotkin, U. Ravaioli

Engineering Science and Mechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We performed tight-binding calculation of the electronic properties of carbon nanotubes in a perpendicular electric field. Within the linear response limit, the dielectric function of a doped carbon nanotube is found to depend not only on its symmetry, but also on the Fermi level position and tube radius. Upon increasing the field, the mixing of neighboring sub bands results in metal-semiconductor transitions in both quasi-metallic and semiconducting nanotubes. The characteristic field strength of the transitions is calculated as a function of the tube radius. An optimal radius range to be used for band gap engineering is estimated for both types.

Original language	English (US)
Title of host publication	2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings
Publisher	IEEE Computer Society
Pages	1-4
Number of pages	4
ISBN (Electronic)	0780379764
DOIs	https://doi.org/10.1109/NANO.2003.1231699
State	Published - 2003
Event	2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States Duration: Aug 12 2003 → Aug 14 2003

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	1
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003
Country/Territory	United States
City	San Francisco
Period	8/12/03 → 8/14/03

All Science Journal Classification (ASJC) codes

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2003.1231699

Cite this

Li, Y., Rotkin, S. V., & Ravaioli, U. (2003). Influence of external electric fields on electronic response and bandstructure of carbon nanotubes. In 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings (pp. 1-4). Article 1231699 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/NANO.2003.1231699

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title = "Influence of external electric fields on electronic response and bandstructure of carbon nanotubes",

abstract = "We performed tight-binding calculation of the electronic properties of carbon nanotubes in a perpendicular electric field. Within the linear response limit, the dielectric function of a doped carbon nanotube is found to depend not only on its symmetry, but also on the Fermi level position and tube radius. Upon increasing the field, the mixing of neighboring sub bands results in metal-semiconductor transitions in both quasi-metallic and semiconducting nanotubes. The characteristic field strength of the transitions is calculated as a function of the tube radius. An optimal radius range to be used for band gap engineering is estimated for both types.",

author = "Yan Li and Rotkin, {S. V.} and U. Ravaioli",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 ; Conference date: 12-08-2003 Through 14-08-2003",

year = "2003",

doi = "10.1109/NANO.2003.1231699",

language = "English (US)",

series = "Proceedings of the IEEE Conference on Nanotechnology",

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Li, Y, Rotkin, SV & Ravaioli, U 2003, Influence of external electric fields on electronic response and bandstructure of carbon nanotubes. in 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings., 1231699, Proceedings of the IEEE Conference on Nanotechnology, vol. 1, IEEE Computer Society, pp. 1-4, 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003, San Francisco, United States, 8/12/03. https://doi.org/10.1109/NANO.2003.1231699

Influence of external electric fields on electronic response and bandstructure of carbon nanotubes. / Li, Yan; Rotkin, S. V.; Ravaioli, U.
2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings. IEEE Computer Society, 2003. p. 1-4 1231699 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Ravaioli, U.

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N2 - We performed tight-binding calculation of the electronic properties of carbon nanotubes in a perpendicular electric field. Within the linear response limit, the dielectric function of a doped carbon nanotube is found to depend not only on its symmetry, but also on the Fermi level position and tube radius. Upon increasing the field, the mixing of neighboring sub bands results in metal-semiconductor transitions in both quasi-metallic and semiconducting nanotubes. The characteristic field strength of the transitions is calculated as a function of the tube radius. An optimal radius range to be used for band gap engineering is estimated for both types.

AB - We performed tight-binding calculation of the electronic properties of carbon nanotubes in a perpendicular electric field. Within the linear response limit, the dielectric function of a doped carbon nanotube is found to depend not only on its symmetry, but also on the Fermi level position and tube radius. Upon increasing the field, the mixing of neighboring sub bands results in metal-semiconductor transitions in both quasi-metallic and semiconducting nanotubes. The characteristic field strength of the transitions is calculated as a function of the tube radius. An optimal radius range to be used for band gap engineering is estimated for both types.

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DO - 10.1109/NANO.2003.1231699

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SP - 1

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BT - 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings

PB - IEEE Computer Society

T2 - 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003

Y2 - 12 August 2003 through 14 August 2003

ER -

Influence of external electric fields on electronic response and bandstructure of carbon nanotubes

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