Influence of interfacial properties on thermal transport at gold:silicon contacts

J. C. Duda; C. Y.P. Yang; B. M. Foley; R. Cheaito; D. L. Medlin; R. E. Jones; P. E. Hopkins

doi:10.1063/1.4793431

Influence of interfacial properties on thermal transport at gold:silicon contacts

J. C. Duda, C. Y.P. Yang, B. M. Foley, R. Cheaito, D. L. Medlin, R. E. Jones, P. E. Hopkins

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.

Original language	English (US)
Article number	081902
Journal	Applied Physics Letters
Volume	102
Issue number	8
DOIs	https://doi.org/10.1063/1.4793431
State	Published - Feb 25 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4793431

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title = "Influence of interfacial properties on thermal transport at gold:silicon contacts",

abstract = "We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.",

author = "Duda, {J. C.} and Yang, {C. Y.P.} and Foley, {B. M.} and R. Cheaito and Medlin, {D. L.} and Jones, {R. E.} and Hopkins, {P. E.}",

note = "Funding Information: J.C.D. and P.E.H. acknowledge funding from the National Science Foundation (CBET-1134311). J.C.D. would like to thank M.S.M. for insightful discussions. This work was supported in part by the Laboratory Directed Research and Development (LDRD) program at Sandia National Laboratories. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.",

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doi = "10.1063/1.4793431",

language = "English (US)",

volume = "102",

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AU - Duda, J. C.

AU - Yang, C. Y.P.

AU - Foley, B. M.

AU - Cheaito, R.

AU - Medlin, D. L.

AU - Jones, R. E.

AU - Hopkins, P. E.

N1 - Funding Information: J.C.D. and P.E.H. acknowledge funding from the National Science Foundation (CBET-1134311). J.C.D. would like to thank M.S.M. for insightful discussions. This work was supported in part by the Laboratory Directed Research and Development (LDRD) program at Sandia National Laboratories. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

PY - 2013/2/25

Y1 - 2013/2/25

N2 - We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.

AB - We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.

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Influence of interfacial properties on thermal transport at gold:silicon contacts

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