Abstract
By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3054-3060 |
| Number of pages | 7 |
| Journal | Chinese Physics B |
| Volume | 18 |
| Issue number | 7 |
| DOIs | |
| State | Published - Aug 25 2009 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy