Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

Wanlin Zhu; Ichiro Fujii; Wei Ren; Susan E. Trolier-McKinstry

doi:10.1007/s10853-014-8500-0

Influence of Li doping on domain wall motion in Pb(Zr_0.52Ti _0.48)O₃ films

Wanlin Zhu, Ichiro Fujii, Wei Ren, Susan E. Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Li-doped PbZr_0.52Ti_0.48O₃ (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε _init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.

Original language	English (US)
Pages (from-to)	7883-7889
Number of pages	7
Journal	Journal of Materials Science
Volume	49
Issue number	22
DOIs	https://doi.org/10.1007/s10853-014-8500-0
State	Published - Nov 2014

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films",

abstract = "Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.",

author = "Wanlin Zhu and Ichiro Fujii and Wei Ren and Trolier-McKinstry, {Susan E.}",

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T1 - Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

AU - Zhu, Wanlin

AU - Fujii, Ichiro

AU - Ren, Wei

AU - Trolier-McKinstry, Susan E.

PY - 2014/11

Y1 - 2014/11

N2 - Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.

AB - Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.

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JF - Journal of Materials Science

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Influence of Li doping on domain wall motion in Pb(Zr_0.52Ti _0.48)O₃ films

Abstract

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