Keyphrases
A-Si
66%
C-Si
33%
Deposition Conditions
33%
Electrical Properties
33%
Ellipsometry Measurement
33%
Film Resistance
33%
Hydrogenated Amorphous Silicon
33%
In Situ
33%
Majority Carriers
33%
Material Microstructure
33%
Microcrystalline
100%
Microstructure
100%
Multiple Samples
33%
P-type
100%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
33%
Real Time Spectroscopic Ellipsometry
33%
Resistivity
66%
Sample Analysis
33%
Silicon Thin Film
100%
Spectroscopic Ellipsometry
33%
Temperature Coefficient of Resistance
66%
Thin Film Deposition
33%
Thin Film Properties
100%
Uncooled Microbolometer
100%
Material Science
Amorphous Silicon
33%
Density
33%
Electrical Resistivity
100%
Film
100%
Film Type
33%
Plasma-Enhanced Chemical Vapor Deposition
33%
Silicon
100%
Thin Film Deposition
33%
Thin Film Property
100%
Thin Films
33%
Engineering
Chemical Vapor Deposition
33%
Deposition Condition
33%
Film Property
100%
Hydrogenated Amorphous Silicon
33%
Material Microstructure
33%
Microcrystalline
100%
Mixed Phase
33%
Multiple Sample
33%
Temperature Coefficient
33%
Temperature Coefficient of the Resistance
33%
Thin Films
100%
Vapor Deposition
33%