Influence of Mn doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

Wanlin Zhu, Ichiro Fujii, Wei Ren, Susan Trolier-Mckinstry

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Mn-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of acceptor dopant concentration on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films between ∼0.5-2 μm in thickness doped with 1-2mol.% Mn, the low field relative permittivity remained between 900 and 1000. With increasing Mn concentration, a threshold field developed in the ac field dependence of the relative permittivity. Furthermore, both the reversible and irreversible Rayleigh constants decreased. These observations are consistent with the possibility that Mn′Ti - VÖ (or Mn″Ti - V Ö ) defect dipoles act as strong pinning centers.

Original languageEnglish (US)
Article number064105
JournalJournal of Applied Physics
Issue number6
StatePublished - Mar 15 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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