Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

S. O. Gordienko; A. N. Nazarov; A. V. Rusavsky; A. V. Vasin; Yu V. Gomeniuk; V. S. Lysenko; V. V. Strelchuk; A. S. Nikolaenko; S. Ashok

doi:10.1002/pssc.201084065

Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

S. O. Gordienko, A. N. Nazarov, A. V. Rusavsky, A. V. Vasin, Yu V. Gomeniuk, V. S. Lysenko, V. V. Strelchuk, A. S. Nikolaenko, S. Ashok

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Abstract

The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si_1-xC_x:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si_1-xC_x:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.

Original language	English (US)
Pages (from-to)	2749-2751
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	9
DOIs	https://doi.org/10.1002/pssc.201084065
State	Published - Sep 2011

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.201084065

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Gordienko, S. O., Nazarov, A. N., Rusavsky, A. V., Vasin, A. V., Gomeniuk, Y. V., Lysenko, V. S., Strelchuk, V. V., Nikolaenko, A. S., & Ashok, S. (2011). Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(9), 2749-2751. https://doi.org/10.1002/pssc.201084065

@article{02c0291cf3244917827c815fd21fde5e,

title = "Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb",

abstract = "The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.",

author = "Gordienko, {S. O.} and Nazarov, {A. N.} and Rusavsky, {A. V.} and Vasin, {A. V.} and Gomeniuk, {Yu V.} and Lysenko, {V. S.} and Strelchuk, {V. V.} and Nikolaenko, {A. S.} and S. Ashok",

year = "2011",

month = sep,

doi = "10.1002/pssc.201084065",

language = "English (US)",

volume = "8",

pages = "2749--2751",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "9",

}

Gordienko, SO, Nazarov, AN, Rusavsky, AV, Vasin, AV, Gomeniuk, YV, Lysenko, VS, Strelchuk, VV, Nikolaenko, AS & Ashok, S 2011, 'Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, no. 9, pp. 2749-2751. https://doi.org/10.1002/pssc.201084065

TY - JOUR

T1 - Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

AU - Gordienko, S. O.

AU - Nazarov, A. N.

AU - Rusavsky, A. V.

AU - Vasin, A. V.

AU - Gomeniuk, Yu V.

AU - Lysenko, V. S.

AU - Strelchuk, V. V.

AU - Nikolaenko, A. S.

AU - Ashok, S.

PY - 2011/9

Y1 - 2011/9

N2 - The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.

AB - The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.

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U2 - 10.1002/pssc.201084065

DO - 10.1002/pssc.201084065

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SN - 1862-6351

VL - 8

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EP - 2751

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 9

ER -

Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

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