Influence of preparation on resistivity behavior of epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films

G. C. Xiong; Q. Li; H. L. Ju; R. L. Greene; T. Venkatesan

doi:10.1063/1.113894

Influence of preparation on resistivity behavior of epitaxial Nd_0.7Sr_0.3MnO_3-δ and La_0.67Ba_0.33MnO_3-δ thin films

G. C. Xiong, Q. Li, H. L. Ju, R. L. Greene, T. Venkatesan

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Abstract

The influence of sample preparation on the resistivity and magnetoresistance (MR) behavior of doped manganese oxides has been studied. Two systems, Nd_0.7Sr_0.3MnO_3-δ and La_0.67Ba_0.33MnO_3-δ thin films, have been chosen for this study. The former has the largest reported MR ratio at 60 K and the latter has a large MR ratio at room temperature. Two processes, deposition at a high temperature and annealing at a high temperature, have opposite influences on the resistivity behavior of these films. The results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

Original language	English (US)
Pages (from-to)	1689
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113894
State	Published - 1995

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Physics and Astronomy (miscellaneous)

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title = "Influence of preparation on resistivity behavior of epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films",

abstract = "The influence of sample preparation on the resistivity and magnetoresistance (MR) behavior of doped manganese oxides has been studied. Two systems, Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films, have been chosen for this study. The former has the largest reported MR ratio at 60 K and the latter has a large MR ratio at room temperature. Two processes, deposition at a high temperature and annealing at a high temperature, have opposite influences on the resistivity behavior of these films. The results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.",

author = "Xiong, {G. C.} and Q. Li and Ju, {H. L.} and Greene, {R. L.} and T. Venkatesan",

year = "1995",

doi = "10.1063/1.113894",

language = "English (US)",

pages = "1689",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Influence of preparation on resistivity behavior of epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films

AU - Xiong, G. C.

AU - Li, Q.

AU - Ju, H. L.

AU - Greene, R. L.

AU - Venkatesan, T.

PY - 1995

Y1 - 1995

N2 - The influence of sample preparation on the resistivity and magnetoresistance (MR) behavior of doped manganese oxides has been studied. Two systems, Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films, have been chosen for this study. The former has the largest reported MR ratio at 60 K and the latter has a large MR ratio at room temperature. Two processes, deposition at a high temperature and annealing at a high temperature, have opposite influences on the resistivity behavior of these films. The results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

AB - The influence of sample preparation on the resistivity and magnetoresistance (MR) behavior of doped manganese oxides has been studied. Two systems, Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films, have been chosen for this study. The former has the largest reported MR ratio at 60 K and the latter has a large MR ratio at room temperature. Two processes, deposition at a high temperature and annealing at a high temperature, have opposite influences on the resistivity behavior of these films. The results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

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ER -

Influence of preparation on resistivity behavior of epitaxial Nd_0.7Sr_0.3MnO_3-δ and La_0.67Ba_0.33MnO_3-δ thin films

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