Influence of trimethylaluminum on the growth and properties of HfO 2 / In0.53 Ga0.47 As interfaces

Yoontae Hwang; Roman Engel-Herbert; Susanne Stemmer

doi:10.1063/1.3553275

Influence of trimethylaluminum on the growth and properties of HfO ₂ / In_0.53 Ga_0.47 As interfaces

Yoontae Hwang, Roman Engel-Herbert, Susanne Stemmer

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Abstract

The growth and the electrical properties of HfO₂ / In _0.53 Ga_0.47 As interfaces are characterized as a function of exposure to trimethylaluminum (TMA) prior to chemical beam deposition of HfO₂ from an alkoxide precursor. It is shown that TMA can act as a surfactant for HfO₂ growth for (2×4) but not for the group-III-rich (4×2) reconstructed surfaces. The Fermi-level can be unpinned by postdeposition forming gas anneals only for interfaces that were exposed to low doses of TMA at low temperatures. The results are discussed in the context of the interaction between TMA and III-V surfaces.

Original language	English (US)
Article number	052911
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3553275
State	Published - Jan 31 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3553275

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title = "Influence of trimethylaluminum on the growth and properties of HfO 2 / In0.53 Ga0.47 As interfaces",

abstract = "The growth and the electrical properties of HfO2 / In 0.53 Ga0.47 As interfaces are characterized as a function of exposure to trimethylaluminum (TMA) prior to chemical beam deposition of HfO2 from an alkoxide precursor. It is shown that TMA can act as a surfactant for HfO2 growth for (2×4) but not for the group-III-rich (4×2) reconstructed surfaces. The Fermi-level can be unpinned by postdeposition forming gas anneals only for interfaces that were exposed to low doses of TMA at low temperatures. The results are discussed in the context of the interaction between TMA and III-V surfaces.",

author = "Yoontae Hwang and Roman Engel-Herbert and Susanne Stemmer",

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AU - Engel-Herbert, Roman

AU - Stemmer, Susanne

N1 - Funding Information: The research was funded by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.

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AB - The growth and the electrical properties of HfO2 / In 0.53 Ga0.47 As interfaces are characterized as a function of exposure to trimethylaluminum (TMA) prior to chemical beam deposition of HfO2 from an alkoxide precursor. It is shown that TMA can act as a surfactant for HfO2 growth for (2×4) but not for the group-III-rich (4×2) reconstructed surfaces. The Fermi-level can be unpinned by postdeposition forming gas anneals only for interfaces that were exposed to low doses of TMA at low temperatures. The results are discussed in the context of the interaction between TMA and III-V surfaces.

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Influence of trimethylaluminum on the growth and properties of HfO ₂ / In_0.53 Ga_0.47 As interfaces

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