Influences on imprint failure of SrBi2Ta2O9 thin film capacitors

Dong Joo Kim; Seung Hyun Kim; Jon Paul Maria; Angus I. Kingon

doi:10.1080/10584589908210185

Influences on imprint failure of SrBi₂Ta₂O₉ thin film capacitors

Dong Joo Kim, Seung Hyun Kim, Jon Paul Maria, Angus I. Kingon

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The imprint behavior of chemical solution deposited SrBi₂Ta₂O₉(SBT) thin films has been investigated. The imprint properties were evaluated by hysteresis loop and pulse polarization measurements. Several parametric variables such as voltage, temperature, thickness and electrode stack structure were used to investigate possible imprint mechanisms. The domain configuration prior to imprinting appears to be an influential factor. If a film is not saturated, imprint rates are more rapid and the voltage shift is accompanied by polarization loss.

Original language	English (US)
Pages (from-to)	351-361
Number of pages	11
Journal	Integrated Ferroelectrics
Volume	25
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589908210185
State	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589908210185

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title = "Influences on imprint failure of SrBi2Ta2O9 thin film capacitors",

abstract = "The imprint behavior of chemical solution deposited SrBi2Ta2O9(SBT) thin films has been investigated. The imprint properties were evaluated by hysteresis loop and pulse polarization measurements. Several parametric variables such as voltage, temperature, thickness and electrode stack structure were used to investigate possible imprint mechanisms. The domain configuration prior to imprinting appears to be an influential factor. If a film is not saturated, imprint rates are more rapid and the voltage shift is accompanied by polarization loss.",

author = "Kim, {Dong Joo} and Kim, {Seung Hyun} and Maria, {Jon Paul} and Kingon, {Angus I.}",

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AU - Kim, Dong Joo

AU - Kim, Seung Hyun

AU - Maria, Jon Paul

AU - Kingon, Angus I.

PY - 1999

Y1 - 1999

N2 - The imprint behavior of chemical solution deposited SrBi2Ta2O9(SBT) thin films has been investigated. The imprint properties were evaluated by hysteresis loop and pulse polarization measurements. Several parametric variables such as voltage, temperature, thickness and electrode stack structure were used to investigate possible imprint mechanisms. The domain configuration prior to imprinting appears to be an influential factor. If a film is not saturated, imprint rates are more rapid and the voltage shift is accompanied by polarization loss.

AB - The imprint behavior of chemical solution deposited SrBi2Ta2O9(SBT) thin films has been investigated. The imprint properties were evaluated by hysteresis loop and pulse polarization measurements. Several parametric variables such as voltage, temperature, thickness and electrode stack structure were used to investigate possible imprint mechanisms. The domain configuration prior to imprinting appears to be an influential factor. If a film is not saturated, imprint rates are more rapid and the voltage shift is accompanied by polarization loss.

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Influences on imprint failure of SrBi₂Ta₂O₉ thin film capacitors

Abstract

All Science Journal Classification (ASJC) codes

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