Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry

David B.Saint John; Haoting Shen; Hang Beum Shin; Thomas Nelson Jackson; Nikolas J. Podraza

doi:10.1109/PVSC.2012.6318239

Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry

David B.Saint John, Haoting Shen, Hang Beum Shin, Thomas Nelson Jackson, Nikolas J. Podraza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε₁ + iε₂ for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.

Original language	English (US)
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	3112-3117
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2012.6318239
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	6/3/12 → 6/8/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2012.6318239

Cite this

John, D. B. S., Shen, H., Shin, H. B., Jackson, T. N., & Podraza, N. J. (2012). Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 3112-3117). Article 6318239 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6318239

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title = "Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry",

abstract = "Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε1 + iε2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.",

author = "John, {David B.Saint} and Haoting Shen and Shin, {Hang Beum} and Jackson, {Thomas Nelson} and Podraza, {Nikolas J.}",

year = "2012",

doi = "10.1109/PVSC.2012.6318239",

language = "English (US)",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "3112--3117",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

John, DBS, Shen, H, Shin, HB, Jackson, TN & Podraza, NJ 2012, Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6318239, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3112-3117, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6318239

Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. / John, David B.Saint; Shen, Haoting; Shin, Hang Beum et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 3112-3117 6318239 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry

AU - John, David B.Saint

AU - Shen, Haoting

AU - Shin, Hang Beum

AU - Jackson, Thomas Nelson

AU - Podraza, Nikolas J.

PY - 2012

Y1 - 2012

N2 - Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε1 + iε2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.

AB - Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε1 + iε2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.

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Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry

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