Infrared probe of the insulator-to-metal transition in Ga 1-xMnxAs and Ga1-xBexAs

B. C. Chapler; R. C. Myers; S. MacK; A. Frenzel; B. C. Pursley; K. S. Burch; E. J. Singley; A. M. Dattelbaum; N. Samarth; D. D. Awschalom; D. N. Basov

doi:10.1103/PhysRevB.84.081203

Infrared probe of the insulator-to-metal transition in Ga _1-xMn_xAs and Ga_1-xBe_xAs

B. C. Chapler
, R. C. Myers
, S. MacK
, A. Frenzel
, B. C. Pursley
, K. S. Burch
, E. J. Singley
, A. M. Dattelbaum
, N. Samarth
, D. D. Awschalom
, D. N. Basov

Physics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga_1-xMn_xAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

Original language	English (US)
Article number	081203
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.84.081203
State	Published - Aug 26 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.84.081203

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Chapler, B. C., Myers, R. C., MacK, S., Frenzel, A., Pursley, B. C., Burch, K. S., Singley, E. J., Dattelbaum, A. M., Samarth, N., Awschalom, D. D., & Basov, D. N. (2011). Infrared probe of the insulator-to-metal transition in Ga _1-xMn_xAs and Ga_1-xBe_xAs. Physical Review B - Condensed Matter and Materials Physics, 84(8), Article 081203. https://doi.org/10.1103/PhysRevB.84.081203

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title = "Infrared probe of the insulator-to-metal transition in Ga 1-xMnxAs and Ga1-xBexAs",

abstract = "We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga1-xMnxAs, which persists across the IMT to the highest doping (16\%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.",

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AU - Chapler, B. C.

AU - Myers, R. C.

AU - MacK, S.

AU - Frenzel, A.

AU - Pursley, B. C.

AU - Burch, K. S.

AU - Singley, E. J.

AU - Dattelbaum, A. M.

AU - Samarth, N.

AU - Awschalom, D. D.

AU - Basov, D. N.

PY - 2011/8/26

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AB - We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga1-xMnxAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

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Infrared probe of the insulator-to-metal transition in Ga _1-xMn_xAs and Ga_1-xBe_xAs

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